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| SMD Type Silicon NPN Epitaxial Planar Type 2SD2359 Transistors Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 20 5 1.2 1 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = 14 V, IE = 0 IC = 10 iA, IE = 0 IC = 1 mA, IB = 0 IE = 10 iA, IC = 0 VCE = 2 V, IC = 100 mA 20 20 5 200 0.11 100 23 800 0.2 V MHz pF Min Typ Max 1 Unit iA V V V VCE(sat) IC = 500 mA, IB = 10 mA fT Cob VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz Marking Marking 1O www.kexin.com.cn 1 |
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