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| SB2060LFCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES * Low forward voltage drop, low power losses * High efficiency operation * In compliance with EU RoHS 2002/95/EC directives 60 Volts CURRENT 20 Amperes 0.112(2.85) 0.100(2.55) 0.272(6.9) 0.248(6.3) 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) 0.189(4.8) 0.165(4.2) 0.130(3.3) 0.114(2.9) MECHANICAL DATA Case : ITO-220AB, Plastic 0.055(1.4) 0.039(1.0) 0.055(1.4) 0.039(1.0) 0.028(0.7) 0.019(0.5) 0.100(2.55) 0.177(4.5) 0.137(3.5) 0.606(15.4) 0.583(14.8) Weight: 0.055 ounces, 1.5615 grams 0.543(13.8) 0.512(13.0) Terminals : Solderable per MIL-STD-750, Method 2026 0.114(2.9) 0.098(2.5) 0.100(2.55) 0.027(0.67) 0.022(0.57) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.4) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM RJC TJ TSTG VALUE 60 20 10 145 4 .5 -55 to + 125 -55 to + 150 O UNIT V A A C/W o C o C ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS I R=1mA I F=5A I F=10A I F=5A I F=10A VR=60V TJ=25oC TJ=125oC TJ=25oC TJ=100oC MIN. 64 TYP. 68 0.44 0.51 MAX. 0.51 0.60 0.44 0.56 0.5 20 UNIT V V V mA Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) IR Note.1.Pulse test : 380s pulse width, 1% duty cycle 2.Pulse test : Pulse width < 2.5ms September 14,2010-REV.07 PAGE . 1 SB2060LFCT 100 100 TJ = 100C 10 TJ = 125C 1 TJ = 25C IR,Reverse Current (mA) IF, Forward Current (A) TJ = 125C 10 TJ = 100C 1 0.1 TJ = 25C TJ = 75C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.01 20 40 60 80 100 VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics Per Diode 10000 Fig.2 Typical Reverse Characteristics Per Diode IF, Average Forward Current (A) 0.1 1 10 100 CJ, Junction Capacitance (pF) 12.00 10.00 8.00 6.00 4.00 2.00 0.00 0 25 50 75 100 125 150 1000 100 10 VR, Reverse Bias Voltage (V) TC, Case Temperature (C) Fig.3 Typical Junction Capacitance Per Diode Fig.4 Forward Current Derating Curve Per Diode September 14,2010-REV.07 PAGE . 2 |
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