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PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
* 700V, RDS(ON)=5.5@VGS=10V, ID=2A * Low ON Resistance * Fast Switching * Low Gate Charge * Fully Characterized Avalanche Voltage and Current * Specially Desigened for AC Adapter, Battery Charge and SMPS * In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB/TO-251 ITO-220AB
TO-251
2 1 DS G
G2 D3 S
MECHANICAL DATA
* Case: TO-220AB / TO-251 Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJF2N70 PJU2N70
MARKING
F2N70 U2N70
PACKAGE
ITO-220AB TO-251
PACKING
50PCS/TUBE 80PCS/TUBE
Gate Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n D e r a t i ng F a c t o r
T A = 2 5 OC
S ym b o l V DS V GS ID ID M PD T J , T S TG E AS R JC R JA
P J F 2 N7 0 700 +30 2 8 20 0 .1 6
P J U2 N7 0
U ni t s V V
2 8 31 0 .2 5
A A W
O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
-5 5 to +1 5 0 140 6 .2 5 6 2 .5 4 100
O
C
Avalanche Energy with Single Pulse
IAS=2A, VDD=50V, L=45m
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJF2N70 / PJU2N70
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
B V DSS V G S ( t h) R D S ( o n) I DSS I GS S
V GS = 0 V , I D = 2 5 0 uA V D S = V GS , I D = 2 5 0 uA VGS= 10V, I D= 1A VDS=700V, VGS=0V V G S =+ 3 0 V , V D S = 0 V
700 2 .0 -
5.5 -
4 .0 6.5 10 +100
V V uA n
G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt Gate Body Leakage
Dynamic
To t a l G a t e C h a r g e G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a nc e Qg Q gs Q gd t d ( o n) tr t d (o ff) tf C C C
iss
-
1 0 .8 2 .1 4.5 11.2 10.8 2 2 .4 1 6 .8 338 28.6 2.4
18 16 ns 31 24 395 65 3.6 pF nC
V D S = 5 6 0 V , ID = 2 A V GS = 1 0 V
-
VDD=350V ,I D =2A VGS=10V , RG=25
-
oss
V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ
-
rss
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
IS I SM V SD t rr Q rr
IS = 2 A , V G S = 0 V V G S = 0 V , IF = 2 A d i / d t = 1 0 0 A / us
-
260 1 .0 9
2 .0 8 .0 1 .4 -
A A V ns uC
M a x. P ul s e d S o ur c e C ur r e nt D i o d e F o rwa rd Vo lta g e R e v e r s e R e c o v e r y Ti m e R e ve r s e R e c o ve r y C ha r g e
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
4 ID - Drain-to-Source Current (A)
10
ID - Drain Source Current (A)
3.5 3 2.5 2 1.5 1 0.5 0 0 5 10
VGS= 20V~ 6.0V
VDS=40V
5.0V
TJ = 125oC
1
25oC
-55oC 0.1 2 3 4 5 6 7 8
15
20
25
30
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0
7.0
RDS(ON) - On Resistance()
RDS(ON) - On Resistance()
6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2 4 6 8 TJ =25oC
ID =1A
VGS=10V
VGS = 20V
0
1
2
3
4
5
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150
C - Capacitance (pF)
VGS =10 V ID =1.0A
500 400 Ciss 300 200 100 0 0 Crss 5 10 15 20 25 30 f = 1MHz VGS = 0V
Coss
TJ - Junction Temperature
(oC)
VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 10 8 6 4 2 0 0 2 4 6 8 10 12
100
VDS=480V VDS=300V VDS=120V
IS - Source Current (A)
ID =2A
VGS = 0V
10
TJ = 125oC
1
25oC -55oC
0.1
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg - Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(NORMALIZED)
ID = 250A
1.1
1
0.9
0.8 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJF2N70 / PJU2N70
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.

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