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| Type IPD250N06N3 G OptiMOS(TM)3 Power-Transistor Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID 60 25 28 V m A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C Value 28 20 112 13 20 Unit A Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage 1) 2) 3) I D,pulse E AS V GS T C=25 C I D=20 A, R GS=25 mJ V J-STD20 and JESD22 See figure 3 for more detailed information See figure 13 for more detailed information Rev.2.0 page 1 2008-11-26 IPD250N06N3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 36 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=11 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 4) - - 4.2 75 50 K/W 60 2 - 3 0.1 4 1 V A - 10 10 20.7 0.9 25 100 100 25 nA m S I GSS R DS(on) RG g fs V GS=20 V, V DS=0 V V GS=10 V, I D=28 A |V DS|>2|I D|R DS(on)max, I D=28 A 12 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.0 page 2 2008-11-26 IPD250N06N3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=28 A, R G=3 V GS=0 V, V DS=30 V, f =1 MHz - 920 200 9 12 3 13 3 1200 270 - pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=28 A, V GS=0 to 10 V - 6 3 1 4 11 6 9 15 12 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=28 A, T j=25 C V R=30 V, I F=28A, di F/dt =100 A/s - 1.0 32 29 28 112 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev.2.0 page 3 2008-11-26 IPD250N06N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 40 30 25 30 20 P tot [W] 20 I D [A] 0 50 100 150 200 15 10 10 5 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-state resistance 102 0.5 1 s 1 10 s 0.2 Z thJC [K/W] I D [A] 0.1 0.05 10 1 100 s 0.02 0.1 100 1 ms 0.01 single pulse DC 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 10-6 10-5 10-4 10-3 10-2 10-1 V DS [V] t p [s] Rev.2.0 page 4 2008-11-26 IPD250N06N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 120 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 48 5.5 V 6V 7V 8V 100 8V 44 40 80 R DS(on) [m] 36 I D [A] 60 7V 32 40 28 6.5 V 24 20 6V 5.5 V 5V 4.5 V 10 V 20 0 0 1 2 3 16 0 20 40 60 80 100 120 4 V DS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 40 I D [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 C 40 30 30 g fs [S] 20 10 175 C 25 C I D [A] 20 10 0 0 2 4 6 8 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev.2.0 page 5 2008-11-26 IPD250N06N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=28 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 50 5 45 4 40 110 A R DS(on) [m] 35 V GS(th) [V] 3 11A 30 max 25 typ 2 20 1 15 10 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 1000 Ciss 103 100 Coss 175C 98% C [pF] 102 I F [A] 175 C 25 C Crss 10 25C 98% 101 100 0 20 40 60 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev.2.0 page 6 2008-11-26 IPD250N06N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=28 A pulsed parameter: V DD 12 10 12 V 30 V 48 V 8 10 V GS [V] 150 C 100 C 25 C I AV [A] 6 4 2 1 0.1 1 10 100 1000 0 0 2 4 6 8 10 12 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS 68 66 64 Qg V BR(DSS) [V] 62 60 58 56 54 V g s(th) Q g(th) 52 50 -60 -20 20 60 100 140 180 Q sw Q gs Q gd Q g ate T j [C] Rev.2.0 page 7 2008-11-26 IPD250N06N3 G PG-TO252-3 (D-Pak) Rev.2.0 page 8 2008-11-26 IPD250N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 9 2008-11-26 |
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