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| BAT24-02LS Silicon Schottky Diode * RF Schottky diode for mixer applications up to 26 GHz * Extremely low inductance combined with ultra low device capacitance * Very stable performance for all major parameters * Package size: 0.62 x 0.31 x 0.31 mm only * Pb-free (RoHS compliant) package * Qualified according AEC Q101 BAT24-02LS 1 2 Type BAT24-02LS Package TSSLP-2-1 Configuration single, leadless LS(nH) Marking 0.2 0.05 S Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS 73 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 4 110 100 150 -55 ... 150 -55 ... 150 Unit V mA mW C Value 770 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 2008-08-26 BAT24-02LS Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I(BR) = 10 A Reverse current VR = 1 V Forward voltage IF = 1 mA IF = 10 mA VF 0.16 0.25 0.23 0.32 0.32 0.41 V IR 5 A V(BR) 4 V typ. max. Unit AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance I F = 10 mA / 50 mA RF 8 10 CT 0.2 0.23 pF 2 2008-08-26 BAT24-02LS Diode capacitance CT = (VR) f = 1MHz, TA = 25 C 0.3 Diode capacitance CT = (TA) VR = 0 V, f = 1MHz 0.3 pF pF 0.26 0.24 CT CT V 0.2 0.22 0.2 0.18 0.15 0.1 0.16 0.14 0.12 0.05 0 0 1 2 4 0.1 -50 -25 0 25 50 C 100 VR TA Differential forward resistance RF = (TA) IF = 10 mA / 50 mA 10 Ohm Reverse current IR = (TA) VR = 1 V 10 -4 A 8 7 10 -5 RF IR C 6 5 4 3 2 1 0 -50 10 -6 10 -7 10 -8 -25 0 25 50 100 10 -9 -50 -25 0 25 50 C 100 TA TA 3 2008-08-26 BAT24-02LS Reverse current IR = (VR) TA = 25 C 10 -5 Forward Voltage VF = (TA) IF = Parameter 0.5 V A 0.4 0.35 10mA VF 10 -6 IR 0.3 0.25 0.2 0.15 0.1 0.05 1mA 100A 10 -7 0 1 2 V 4 0 -50 -25 0 25 50 C 100 VR TA Forward current IF = (VF) TA = 25 C 10 -1 A 10 -2 Forward current IF = (T S) 120 mA 100 90 80 10 -3 IF 10 -4 IF V 70 60 10 -5 50 40 30 10 -6 10 -7 20 10 10 -8 0 0.2 0.4 0.6 1 0 0 15 30 45 60 75 90 105 120 C 150 VF TS 4 2008-08-26 Package TSSLP-2-1 BAT24-02LS 5 2008-08-26 BAT24-02LS Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-08-26 |
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