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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= -3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A *Complement to Type TIP122 APPLICATIONS *Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B TIP127 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25 Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range VALUE -100 -100 -5 -5 -8 -120 65 UNIT V V V A A mA PC W 2 150 -65~150 Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.92 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. TIP127 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.1A, IB= 0 B -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -5A ,IB= -20mA -4.0 V VBE(on) ICBO Base-Emitter On Voltage IC= -3.0A ; VCE= -3V VCB= -100V, IE= 0 -2.5 V Collector Cutoff Current -0.2 mA ICEO Collector Cutoff Current VCE= -50V, IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE-1 DC Current Gain IC= -0.5A ; VCE= -3V 1000 hFE-2 DC Current Gain IC= -3.0A ; VCE= -3V 1000 COB Output Capacitance IE= 0; VCB= -10V,f= 0.1MHz 300 pF isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP127 isc Websitewww.iscsemi.cn |
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