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STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 17 A SuperMESHTM Power MOSFET , Zener-protected TO-220, TO-247, TO-220FP, D2PAK Features Type STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z VDSS 500 V 500 V 500 V 500 V RDS(on) max < 0.27 < 0.27 < 0.27 < 0.27 ID PW 3 1 2 1 3 2 17 A 190 W 17 A 40 W 17 A 190 W 17 A 190 W TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. TO-247 1 2 3 3 1 DPAK Internal schematic diagram D(2) Application Switching applications Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Table 1. Device summary Marking B20NK50Z F20NK50Z P20NK50Z W20NK50Z G(1) S(3) AM01476v1 Order codes STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z Package DPAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube November 2009 Doc ID 9118 Rev 9 1/18 www.st.com 18 Contents STx20NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) .......................... 7 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 9118 Rev 9 STx20NK50Z Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, TO-247, DPAK 500 30 17 10.71 68 190 1.51 -2500 17 (1) Unit TO-220FP V V A A A W W/C V VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 10.71 68 40 PTOT VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Gate source ESD (HBM-C=100 pF, R=1.5 k) Peak diode recovery voltage slope Storage temperature Max operating junction temperature VESD(G-S) dv/dt (3) Tstg Tj 6000 4.5 -55 to 150 150 V/ns C C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 17 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX. Table 3. Symbol Thermal data Value Parameter TO-220, DPAK 0.66 62.5 50 300 Unit TO-247 TO-220FP 3.1 62.5 C/W C/W C Rthj-case Rthj-amb Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Doc ID 9118 Rev 9 3/18 Electrical ratings STx20NK50Z Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ=25 C, ID=IAR, VDD=50 V) Value 17 850 Unit A mJ 4/18 Doc ID 9118 Rev 9 STx20NK50Z Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 VDS = max rating VDS = max rating, TC = 125 C VGS = 20 V VDS = VGS, ID = 100 A VGS = 10 V, ID = 8.5 A 3 3.75 0.23 Min. 500 1 50 10 4.5 0.27 Typ. Max. Unit V A A A V Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Test conditions VDS = 15 V, ID = 8.5 A Min. Typ. 13 2600 328 72 187 28 20 70 15 85 15.5 42 119 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Input capacitance VDS = 25 V, f = 1 MHz, Output capacitance V =0 Reverse transfer capacitance GS Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =0, VDS = 0 to 640 V VDD = 250 V, ID = 8.5 A, RG = 4.7 , VGS = 10 V (see Figure 19) VDD = 400 V, ID = 17 A, VGS = 10 V (see Figure 20) - - - 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Doc ID 9118 Rev 9 5/18 Electrical characteristics STx20NK50Z Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, VGS = 0 ISD = 17 A, di/dt = 100 A/s VR = 100 V (see Figure 21) ISD = 17 A, di/dt = 100 A/s VR = 100 V, Tj = 150 C (see Figure 21) Test conditions Min. 355 3.90 22 440 5.72 26 Typ. Max. 17 68 1.6 Unit A A V ns C A ns C A - - 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 1mA (open drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 6/18 Doc ID 9118 Rev 9 STx20NK50Z Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, DPAK Figure 3. Thermal impedance for TO-220, DPAK Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP Doc ID 9118 Rev 9 7/18 Electrical characteristics Figure 8. Output characteristics Figure 9. STx20NK50Z Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/18 Doc ID 9118 Rev 9 STx20NK50Z Figure 14. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Maximum avalanche energy vs temperature Figure 17. Normalized BVDSS vs temperature Figure 18. Source-drain diode forward characteristic Doc ID 9118 Rev 9 9/18 Test circuits STx20NK50Z 3 Test circuits Figure 20. Gate charge test circuit Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 10/18 Doc ID 9118 Rev 9 STx20NK50Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 9118 Rev 9 11/18 Package mechanical data STx20NK50Z DPAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M 12/18 Doc ID 9118 Rev 9 STx20NK50Z Package mechanical data TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J Doc ID 9118 Rev 9 13/18 Package mechanical data STx20NK50Z TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 14/18 Doc ID 9118 Rev 9 STx20NK50Z Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S Doc ID 9118 Rev 9 15/18 Packaging mechanical data STx20NK50Z 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 16/18 Doc ID 9118 Rev 9 STx20NK50Z Revision history 6 Revision history Table 9. Date 21-Jun-2004 26-Mar-2009 26-Nov-2009 Document revision history Revision 7 8 9 Added new package, mechanical data. Updated symbol for RDS(on) in Table 5: On/off states. Changes Doc ID 9118 Rev 9 17/18 STx20NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 Doc ID 9118 Rev 9 |
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