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Soft Switching Series
IHW30N100T q
C
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with anti-parallel diode
Features: * 1.1V Forward voltage of antiparallel rectifier diode * Specified for TJmax = 175C * TrenchStop(R) and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI * Qualified according to JEDEC1 for target applications * Application specific optimisation of inverse diode * Pb-free lead plating; RoHS compliant Applications: * Microwave Oven * Soft Switching Applications Type IHW30N100T VCE 1000V IC 30A VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30T100 Package PG-TO-247-3
G
E
PG-TO-247-3
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1000V, Tj 175C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpuls VGE ICpuls IF 22 12 36 20 25 412 -40...+175 -55...+175 260 W C C V Symbol VCE IC 60 30 90 90 Value 1000 Unit V A
1
J-STD-020 and JESD-022 1 Rev. 2.7 Nov 08
Power Semiconductors
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 150 C T j = 175 C Diode forward voltage VF VGE=0V, IF=10A T j = 25C T j = 150 C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =700 A,V C E =V G E V C E = 10 00 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 80 0 V, I C =30A V G E =15V IGES gfs V C E = 0 V ,V G E =20V V C E =20V, I C =30A Symbol Conditions RthJA RthJCD RthJC Symbol Conditions
IHW30N100T q
Max. Value 0.36 1.1 40 Unit K/W
Value min. 1000 1.3 5.1 Typ. 1.55 1.7 1.8 1.1 1.0 1.0 5.8 max. 1.7 1.3 6.4
Unit
V
A 28 5 2500 600 nA S
-
3573 98 76 217 13
-
pF
nC nH
Power Semiconductors
2
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 60 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 5 , Energy losses include "tail" and diode reverse recovery. 35 22 546 27 1.6 42 2.6 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 175 C V C C = 60 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 5 Energy losses include "tail" and diode reverse recovery. 33 36 623 37 2.3 70 4 mJ ns Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
3
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
tp=1s
90A 80A
20s
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 100Hz 1kHz 10kHz 100kHz TC=80C TC=110C
IC, COLLECTOR CURRENT
10A
50s 100s 500s
Ic
1A DC 10ms
0.1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 26.9)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
400W 350W
50A
IC, COLLECTOR CURRENT
50C 75C 100C 125C 150C
POWER DISSIPATION
300W 250W 200W 150W 100W 50W 0W 25C
40A
30A
Ptot,
20A
10A
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
100A VGE=20V
100A
IC, COLLECTOR CURRENT
80A
15V 13V
IC, COLLECTOR CURRENT
80A
VGE=20V 15V 13V 11V
60A
11V 9V
60A
40A
7V
40A
9V 7V
20A
20A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
100A
2.5V
IC=80A
IC, COLLECTOR CURRENT
80A
2.0V
IC=40A
60A
1.5V IC=20A
40A TJ=175C 20A 25C
1.0V
0.5V
0A 0V 2V 4V 6V 8V 10V
0.0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
td(off)
1000ns
1000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tf
100ns
tf
10ns
0A
10A
20A
30A
40A
50A
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 600V, VGE = 0/15V, RG=26.9, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
1000ns td(off)
6V max. 5V typ. 4V
t, SWITCHING TIMES
min.
100ns
3V
tf
25C
50C
75C
100C
125C
150C
2V -50C
0C
50C
100C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG=26.9, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
Power Semiconductors
6
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
5.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
3.0mJ
4.0mJ
Eoff
Eoff
3.0mJ
2.0mJ
2.0mJ
1.0mJ
1.0mJ
0.0mJ
0.0mJ
0A 10A 20A 30A 40A 50A
20 30 40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 600V, VGE = 0/15V, RG=26.9, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
2.5mJ
3.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ
Eoff
2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 400V
Eoff
1.5mJ
1.0mJ
0.5mJ
0.0mJ 25C
50C
75C
100C 125C 150C
500V
600V
700V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG = 26.9, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 26.9, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
VGE, GATE-EMITTER VOLTAGE
Ciss
10V 200V
1nF
c, CAPACITANCE
800V
5V
100pF
Coss
Crss
0V
0nC
50nC
100nC 150nC 200nC 250nC
10pF
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
10 K/W D=0.5
0
10 K/W
-1
0.2 0.1 0.05 0.02
R,(K/W) 0.1586 0.0987 0.0807 0.026
R1
, (s) -2 7.03*10 -3 6.76*10 -4 6.53*10 -5 8.22*10
R2
0.2 0.1 10 K/W
-1
0.05 0.02 0.01 single pulse
R,(K/W) 0.0715 0.2222 0.4265 0.364 0.0181
R1
, (s) -2 9.45*10 -2 2.55*10 -3 3.6*10 -4 5.1*10 -4 1.09*10
R2
10 K/W
-2
0.01
C 1 = 1 /R 1 C 2 = 2 /R 2
single pulse 1s 10s 100s 1ms 10ms 100ms
C1= 1/R1
C2= 2/R2
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
IF=20A 10A
TJ=25C 30A 175C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.0V 3A
20A
0.5V
10A
0A
0.0V
0.5V
1.0V
1.5V
0.0V -50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
10
Rev. 2.7 Nov 08
Soft Switching Series
i,v
IHW30N100T q
diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure E. Dynamic test circuit Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.7 Nov 08
Soft Switching Series
IHW30N100T q
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Power Semiconductors
12
Rev. 2.7 Nov 08

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