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| SMD Type 60V P-Channel MOSFET KQB27P06 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features -27A, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) + .2 8 .7 -00.2 Low Crss ( typical 120pF) Fast switching 100% avalanche tested +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 175 maximum junction temperature rating 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 Improved dv/dt capability + .2 5 .2 8 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous TC=25 Drain Current Continuous TC=100 Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power dissipation @ Ta=25 Power dissipation @ Tc=25 Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient * Thermal Resistance Junction to Ambient TJ, TSTG TL R R R JC JA JA Symbol VDSS ID (Note 1) IDM VGSS EAS IAR EAR dv/dt Rating -60 -27 -19.1 -108 25 560 -27 12 -7 3.75 Unit V A A A V mJ A mJ V/ns W W W/ (Note 1) (Note 1) (Note 3) PD 120 0.8 -55 to 175 300 1.25 40 62.5 /W /W /W * When mounted on the minimum pad size recommended (PCB Mount) 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KQB27P06 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 3. ISD -27A, di/dt 300A/ s, VDD , Starting TJ = 25 IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr VGS = 0 V, IS = -27 A VGS = 0 V, IS = -27 A, dIF / dt = 100 A/ s (Note 4) VDS = -48 V, ID = -27 A,VGS = -10 V(Note4,5) VDD = -30V, ID = -13.5 A,RG = 25 (Note4,5) VDS = -25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = -250 ID = -250 A Transistors IC Min -60 Typ Max Unit V A, Referenced to 25 -0.06 -1 -10 -100 100 V/ A A nA nA V VDS = -60 V, VGS = 0 V VDS = -48V, TC=150 VGS = -25 V, VDS = 0 V VGS = 25V, VDS = 0 V VDS = VGS, ID = -250 A -2.0 0.055 12.4 1100 510 120 18 185 30 90 33 6.8 18 -4.0 0.07 VGS = -10 V, ID = -13.5A VDS = -30 V, ID = -13.5 A S 1400 660 155 45 380 70 190 43 pF pF pF ns ns ns ns nC nC nC -27 -108 -4.0 A A V ns c 105 0.41 BVDSS, Starting TJ = 25 2% 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature 2 www.kexin.com.cn |
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