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| IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max TO-263 ID 100 12.3 58 V m A * Ideal for high-frequency switching and synchronous rectification * Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package Marking PG-TO220-3 126N10N PG-TO263-3 123N10N PG-TO262-3 126N10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 58 42 232 70 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=46 A, R GS=25 mJ V W C T C=25 C 94 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.3 page 1 2010-06-23 IPP126N10N3 G IPB123N10N3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 1.6 62 40 K/W Values typ. max. IPI126N10N3 G Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=46 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=46 A, TO 220, TO 262 V GS=6 V, I D=23 A, TO 220, TO 262 V GS=10 V, I D=46 A, TO 263 V GS=6 V, I D=23 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=46 A 100 2 2.7 0.1 3.5 1 A V - 10 1 11.0 100 100 12.6 nA m - 13.6 23.5 - 10.7 12.3 29 13.3 1.1 57 23.2 S 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2010-06-23 IPP126N10N3 G IPB123N10N3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) IPI126N10N3 G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=46 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz - 1880 330 14 14 8 24 5 2500 439 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=46 A, V GS=0 to 10 V - 9 5 9 26 4.9 35 35 46 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=46 A, T j=25 C V R=15 V, I F=46 A , di F/dt =100 A/s - 0.9 61 103 58 232 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2010-06-23 IPP126N10N3 G IPB123N10N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPI126N10N3 G 100 60 80 50 40 60 P tot [W] I D [A] 40 20 0 0 50 100 150 200 30 20 10 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 s 102 10 s 100 0.5 Z thJC [K/W] 100 s I D [A] 0.2 0.1 0.05 1 ms 101 10 ms DC 10-1 0.02 0.01 single pulse 100 10 -1 10-2 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.3 page 4 2010-06-23 IPP126N10N3 G IPB123N10N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 180 10 V IPI126N10N3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 25 4.5 V 160 140 120 7.5 V 20 5V 6V R DS(on) [m] 15 6V I D [A] 100 80 60 40 20 0 0 0 4.5 V 5V 7.5 V 10 V 5.5 V 10 5 0 1 2 3 4 5 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 80 80 60 60 40 g fs [S] 40 20 175 C 25 C I D [A] 20 0 0 2 4 6 8 0 0 40 80 120 V GS [V] I D [A] Rev. 2.3 page 5 2010-06-23 IPP126N10N3 G IPB123N10N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=46 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 28 26 24 22 20 18 3 460 A IPI126N10N3 G 4 3.5 R DS(on) [m] 2.5 98 % 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 180 typ V GS(th) [V] 16 46 A 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 102 175 C 175 C, 98% 25 C C [pF] 102 I F [A] 25 C, 98% Crss 101 101 100 0 20 40 60 80 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.3 page 6 2010-06-23 IPP126N10N3 G IPB123N10N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 IPI126N10N3 G 14 Typ. gate charge V GS=f(Q gate); I D=46 A pulsed parameter: V DD 10 8 80 V 50 V 25 C 6 20 V 10 150 C V GS [V] 4 2 0 100 1000 0 I AS [A] 100 C 1 0.1 1 10 10 20 30 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 110 V GS Qg 105 V BR(DSS) [V] 100 V g s(th) 95 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 90 T j [C] Rev. 2.3 page 7 2010-06-23 IPP126N10N3 G IPB123N10N3 G PG-TO-220 IPI126N10N3 G Rev. 2.3 page 8 2010-06-23 IPP126N10N3 G IPB123N10N3 G PG-TO-262 IPI126N10N3 G Rev. 2.3 page 9 2010-06-23 IPP126N10N3 G IPB123N10N3 G PG-TO-263-3 (D2-Pak) IPI126N10N3 G Rev. 2.3 page 10 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2010-06-23 |
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