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| EMIF02-MIC02F3 2-line IPADTM, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency EMI filtering Lead-free package Very low PCB space consumption: 0.9 mm2 Very thin package: 0.60 mm High efficiency ESD suppression High reliability offered by monolithic integration High reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin layout (bump side) Flip Chip (6 bumps) Complies with the following standards 3 E2 I2 2 GND GND 1 E1 I1 IEC61000-4-2 level 4 on external pins: - 15 kV (air discharge) - 8 kV (contact discharge) IEC61000-4-2 level 1 on internal pins: - 2 kV (air discharge) - 2 kV (contact discharge) Figure 2. A B Applications Where EMI filtering in ESD sensitive equipment is required: Basic cell configuration Low-pass Filter Mobile phones and communication systems Computers, printers and MCU Boards I1 I2 E1 E2 Description The EMIF02-MIC02F3 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 15 kV. Ri/o = 470 Cline = 16 pF GND GND GND TM: IPAD is a trademark of STMicroelectronics. April 2008 Rev 2 1/8 www.st.com Characteristics EMIF02-MIC02F3 1 Characteristics Table 1. Symbol Absolute ratings (limiting values) Parameter External pins (A1, A3): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge Internal pins (B1, B3): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge Junction temperature Operating temperature range Storage temperature range Value 15 8 2 2 125 -40 to + 85 -55 to 150 C C C Unit VPP kV Tj Top Tstg Table 2. Symbol VBR IRM VRM VCL Rd IPP RI/O Cline Symbol VBR IRM RI/O Cline Electrical characteristics (Tamb = 25 C) Parameters Breakdown voltage Leakage current @ VRM Stand-off voltage Clamping voltage Dynamic impedance Peak pulse current Series resistance between Input & Output Input capacitance per line Test conditions IR = 1 mA VRM = 12 V per line Tolerance 10 % Vline = 0V, VOSC = 30 mV, F = 1 MHz, (measured under zero light conditions) 470 16 20 Min 14 Typ 16 200 Max Unit V nA pF IPP VCL VBR VRM IR IRM IRM IR VRM VBR VCL V I IPP 2/8 EMIF02-MIC02F3 Characteristics Figure 3. dB S21 (dB) attenuation measurement Figure 4. (Line 1) 0.00 S21 (dB) attenuation measurement (Line 2) 0.00 dB -10.00 -10.00 -20.00 -20.00 -30.00 -30.00 -40.00 -40.00 -50.00 -50.00 f (Hz) -60.00 100.0k 1.0M Line 1 10.0M 100.0M 1.0G f (Hz) -60.00 100.0k 1.0M Line 2 10.0M 100.0M 1.0G Figure 5. 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 Analog crosstalk measurement Figure 6. Digital crosstalk measurement dB Output Line 2 10mV/d Input Line 1 -70.00 -80.00 -90.00 -100.00 100.0k 1.0M Xtalk 1/2 10.0M 100.0M 1.0G 1V/d f (Hz) 10ns/d 5Gs/s Figure 7. ESD response to IEC 61000-4-2 Figure 8. (+15 kV air discharge) on one input and on one output ESD response to IEC 61000-4-2 (-15 kV air discharge) on one input and on one output Input 20V/d Input 20V/d Output 10V/d Output 10V/d 100ns/d 100ns/d 3/8 Application information EMIF02-MIC02F3 Figure 9. Line capacitance versus applied voltage 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 CLINE (pF) VLINE (V) 2 Application information Figure 10. Aplac model E1 Rbump Lbump Rline Lbump Rbump MODEL = D2 I1 MODEL = D1 MODEL = D3 MODEL = D1 E2 Rbump Lbump Rline Lbump Rbump Rbump MODEL = D2 I2 Lbump Lbump Rbump Lgnd Rgnd Ls Rs E1 I1 Rs Ls Lgnd Rgnd Port1 50 Port2 50 Figure 11. Aplac parameters Variables aplacvar Rline 490 aplacvar C_d1 11p aplacvar C_d2 5p aplacvar C_d3 240p aplacvar L 2pH aplacvar Ls 950pH aplacvar Rs 150m aplacvar Lbump 50pH aplacvar Rbump 20m aplacvar Lgnd 80pH aplacvar Rgnd 100m Diode D1 BV=7 CJO=c_d1 IBV=1u IKF=1000 IS=10f ISR=100p N=1 M=0.3333 RS=0.85 VJ=0.6 TT=50n Diode D2 BV=7 CJO=c_d2 IBV=1u IKF=1000 IS=10f ISR=100p N=1 M=0.3333 RS=0.85 VJ=0.6 TT=50n Diode D3 BV=7 CJO=c_d3 IBV=1u IKF=1000 IS=10f ISR=100p N=1 M=0.3333 RS=0.47 VJ=0.6 TT=50n 4/8 EMIF02-MIC02F3 Ordering information scheme 3 Ordering information scheme Figure 12. Ordering information scheme EMIF EMI Filter Number of lines Information x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version Package F = Flip Chip x = 3: Lead-free, pitch = 400 m, bump = 255 m yy - xxx zz Fx 4 Package information In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Figure 13. Package dimensions 185 m 10 400 m 40 605 m 55 400 m 40 185 m 10 0.77 mm 30 m 255 m 40 1.17 mm 30m 5/8 Ordering information EMIF02-MIC02F3 Figure 14. Footprint Copper pad Diameter: 220 m recommended 260 m maximum Solder mask opening: 300 m minimum Figure 15. Marking Dot, ST logo xx = marking z = manufacturing location yww = datecode (y = year ww = week) E Solder stencil opening : 220 m recommended xxz y ww Figure 16. Flip Chip tape and reel specifications Dot identifying Pin A1 location 4 0.1 O 1.5 0.1 1.75 0.1 3.5 0.1 0.87 0.71 0.05 All dimensions in mm 8 0.3 STE STE STE xxz yww User direction of unreeling xxz yww xxz yww 4 0.1 1.27 Note: More information is available in the application notes: AN2348: "STMicroelectronics 400 micro-metre Flip Chip: Package description and recommendation for use" AN1751: EMI Filters: Recommendations and measurements 5 Ordering information Table 3. Ordering information Marking HB Package Flip Chip Base qty 5000 Delivery mode Tape and reel (7") Order code EMIF02-MIC02F3 6/8 EMIF02-MIC02F3 Revision history 6 Revision history Table 4. Date 17-Jan-2006 28-Apr-2008 Document revision history Revision 1 2 Initial release. Updated ECOPACK statement. Updated Figure 12, Figure 13 and Figure 16. Reformatted to current standards. Changes 7/8 EMIF02-MIC02F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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