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NTR4502P Power MOSFET
-30 V, -1.95 A, Single, P-Channel, SOT-23
Features
* * * * * * * *
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V(BR)DSS -30 V RDS(on) TYP 155 mW @ -10 V 240 mW @ -4.5 V P-Channel MOSFET S -1.95 A ID Max (Note 1)
Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) Pb-Free Packages are Available DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera's, etc. Battery Charging Circuits
Applications
G
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (Note 1) t < 10 s TA = 25C TA = 70C Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current t < 10 s Steady State TA = 25C TA = 70C PD IDM TJ, TSTG IS TL PD ID Symbol VDSS VGS ID Value -30 20 -1.95 -1.56 1.25 -1.13 -0.90 0.4 -6.8 -55 to 150 -1.25 260 W A C A C W A SOT-23 CASE 318 STYLE 21 TR2 M G Unit V V A D
MARKING DIAGRAM/ PIN ASSIGNMENT
Drain 3 TR2 M G G 1 Gate = Device Code = Date Code* = Pb-Free Package 2 Source
Steady State tp = 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t = 10 s (Note 1) Symbol RqJA RqJA Max 300 100 Unit C/W
NTR4502PT1 NTR4502PT1G NTR4502PT3 NTR4502PT3G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
April, 2009 - Rev. 4
1
Publication Order Number: NTR4502P/D
NTR4502P
Electrical Characteristics (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(TH) RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf VSD tRR VGS = 0 V, IS = -1.25 A VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.25 A VGS =-10 V, VDD = -15 V, ID = -1.95 A, RG = 6 W VGS = -10 V, VDS = -15 V; ID = -1.95 A VGS = 0 V, ID = -250 mA VGS = 0 V, VDS = -30 V VDS = 0 V, VGS = 20 V VGS = VDS, ID = -250 mA VGS = -10 V, ID = -1.95 A VGS = -4.5 V, ID = -1.5 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5.2 12 19 17.5 10 20 35 30 ns VGS = 0 V, f = 1 MHz, VDS = -15 V 200 80 50 6 0.3 1 1.7 10 nC pF VDS = -10 V, ID=-1.25 A -1.0 155 240 3 TJ = 25C TJ = 55C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance -3.0 200 350 S V mW -30 -1 -10 100 nA V mA Symbol Test Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage Reverse Recovery Time -0.8 23 -1.2 V ns
2. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4502P
5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 VGS = -4.0 V VGS = -5.0 V VGS = -7.0 V VGS = -10 V TJ = 25C VGS = -3.8 V VGS = -3.6 V VGS = -3.4 V VGS = -3.2 V VGS = -3.0 V VGS = -2.4 V 0 1 2 3 4 5 6 VGS = -2.8 V VGS = -2.6 V 7 8 9 10 5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 VDS = -10 V TJ = -55C TJ = 25C TJ = 100C
1
2
3
4
5
6
7
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0.4 0.35 0.3 0.25 0.2 0.15 0.1
0.3 TJ = 25C 0.25 VGS = -4.5 V
ID = -1.95 A TJ = 25C
0.2 VGS = -10 V 0.15
3
4
5
6
7
8
9
10
0.1
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE-TO-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Gate-to-Source Voltage
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = -1.9 A VGS = -10 V
1000 VGS = 0 V TJ = 150C
-IDSS, LEAKAGE (nA)
100
10 TJ = 100C
1 2 6 10 14 18 22 26 30 -VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTR4502P
500 VDS = 0 V C, CAPACITANCE (pF) 400 300 200 100 0 10 CISS CRSS CISS COSS CRSS VGS = 0 V TJ = 25C
5
0
5
10
15
20
25
30
-VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
QT
10 8 6 15 12 9
QGS
4 2 0 0 1
QGD
6
ID = -1.95 A TJ = 25C
2 3 4 5 6 7
3 0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
100 VDS = -15 V ID = -1.95 V VGS = -10 V td(off) t, TIME (ns) 10 td(on) tr tf
3
TJ = 25C -IS, SOURCE CURRENT
2.5 2 1.5 1 0.5 0
1
1
10 RG, GATE RESISTANCE (W)
100
0.3
0.6
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0.9
12
18
-VGS, GATE-TO-SOURCE VOLTAGE (V)
1.2
-VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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NTR4502P
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTR4502P/D

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