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Freescale Semiconductor Technical Data
Document Number: MW6IC2015N Rev. 3, 12/2008
The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale's newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances 1805 - 1990 MHz, 15 W, 26 V cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, GSM/GSM EDGE, CDMA TDMA, CDMA, W - CDMA and TD - SCDMA. RF LDMOS WIDEBAND Final Application INTEGRATED POWER AMPLIFIERS * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, f = 1930 MHz Power Gain -- 26 dB Power Added Efficiency -- 28% IMD -- - 30 dBc CASE 1329 - 09 Driver Application TO - 272 WB - 16 * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 130 mA, IDQ2 = PLASTIC 170 mA, Pout = 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or MW6IC2015NBR1 1930 - 1990 MHz) Power Gain -- 27 dB Power Added Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = - 69 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 0.8% rms CASE 1329A - 04 * Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW TO - 272 WB - 16 GULL Output Power PLASTIC * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW MW6IC2015GNBR1 Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2015NBR1 MW6IC2015GNBR1
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 NC GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout / VDS2
VGS1 VGS2
Quiescent Current Temperature Compensation (1)
13 12
NC GND
Figure 1. Functional Block Diagram
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MW6IC2015NBR1 MW6IC2015GNBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power
(1,2)
Symbol VDSS VGS Tstg TC TJ Pin
Value - 0.5, +68 - 0.5, +6 - 65 to +150 150 225 20
Unit Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Final Application (Pout = 15 W CW) Driver Application (Pout = 3 W CW) Stage 1, 26 Vdc, IDQ1 = 100 mA Stage 2, 26 Vdc, IDQ2 = 170 mA Stage 1, 26 Vdc, IDQ1 = 130 mA Stage 2, 26 Vdc, IDQ2 = 170 mA Symbol RJC 4.3 1.2 4.3 1.3 Value (2,3) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two - Tone CW Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL 24 26 -- -- 26 28 - 30 -- -- -- - 27 - 10 dB % dBc dB
Typical Two - Tone Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W PEP, 1805 - 1880 MHz, Two - Tone CW, 100 kHz Tone Spacing Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL -- -- -- -- 26 28 - 30 - 10 -- -- -- -- dB % dBc dB
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW6IC2015NBR1 MW6IC2015GNBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, 1805 - 1880 MHz and 1930 - 1990 MHz Saturated Pulsed Output Power, CW (8 sec(on), 1 msec(off)) Quiescent Current Accuracy over Temperature with 1.8 k Gate Feed Resistors ( - 10 to 85C) (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 3 W CW Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 3 W CW Average Group Delay @ Pout = 3 W CW Including Output Matching Part - to - Part Insertion Phase Variation @ Pout = 3 W CW, Six Sigma Window Psat IQT GF Delay -- -- -- -- -- -- 35 3 0.3 1 2.7 15 -- -- -- -- -- -- W % dB ns
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 130 mA, IDQ2 = 170 mA, Pout = 3 W Avg., 1805 - 1990 MHz and 1930 - 1990 MHz EDGE Modulation Power Gain Power Added Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps PAE EVM SR1 SR2 -- -- -- -- -- 27 19 0.8 - 69 - 78 -- -- -- -- -- dB % % dBc dBc
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 3
VDD2 VDD1 C1 RF INPUT 1 2 3 NC 4 NC 5 NC 6 C11 C6 VGG1 R1 C14 VGG2 R2 C4 C15 C5 7 NC 8 Quiescent Current Temperature Compensation 9 NC 13 10 NC 11 12 C8 Z9 C10 C12 C13 DUT 16 NC 15 C2 Z8 RF OUTPUT C3
Z1
Z2
Z3
14
Z4
Z5
C7
C9
Z6
Z7
Z1* Z2 Z3 Z4 Z5
1.68 0.50 0.15 0.13 0.10
x 0.08 Microstrip x 0.08 Microstrip x 0.04 Microstrip x 0.35 Microstrip x 0.35 Microstrip
Z6* Z7 Z8, Z9 PCB
0.61 x 0.04 Microstrip 1.30 x 0.04 Microstrip 1.18 x 0.08 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning.
Figure 3. MW6IC2015NBR1(GNBR1) Test Circuit Schematic -- 1930 - 1990 MHz
Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values -- 1930 - 1990 MHz
Part C1, C14, C15 C2, C4, C11 C3, C5 C6 C7, C8 C9, C10 C12 C13 R1 R2 Description 2.2 F Chip Capacitors 5.6 pF Chip Capacitors 10 F Chip Capacitors 1 pF Chip Capacitor 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.1 pF Chip Capacitor 10 k, 1/4 W Chip Resistor 18 , 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B5R6CT500XT C5750X5R1H106MT ATC100B1R0BT500XT ATC100B2R2BT500XT ATC100B0R5BT500XT ATC100B0R2BT500XT ATC100B0R1BT500XT CRCW12061002FKEA CRCW120618R0FKEA Manufacturer TDK ATC TDK ATC ATC ATC ATC ATC Vishay Vishay
MW6IC2015NBR1 MW6IC2015GNBR1 4 RF Device Data Freescale Semiconductor
VDD1 C2
C3 VDD2
MW6IC2015, Rev. 0
C1
CUT OUT AREA
C7 C8
C9 C11 C10 C12 C13
C6
C14 R1 R2 C4 VGG2 C5
VGG1
C15
Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout -- 1930 - 1990 MHz
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 40 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 35 PAE 30 Gps 25 20 IMD 15 10 1900 VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing 1920 1940 1960 1980 -50 -60 2000 IRL -30 -40 -20 0 -10
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance @ Pout = 7.5 Watts Avg.
30 Gps PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 25 20 15 10 5 IMD PAE IRL -10 -20 -30 -40 VDD = 26 Vdc, Pout = 1.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing 1920 1940 1960 1980 -50 -60 2000 0
0 1900
f, FREQUENCY (MHz)
Figure 6. Two - Tone Wideband Performance @ Pout = 1.5 Watts Avg.
IDQ1 = 130 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 130 mA IDQ1 = 70 mA IDQ2 = 170 mA IMD, INTERMODULATION DISTORTION (dBc) 31 30 Gps, POWER GAIN (dB) 29 28 27 26 25 24 23 0.1 -10 -20 -30 -40 -50 7th Order -60 -70 -80 0.1 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 5th Order VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f = 1960 MHz, 100 kHz Tone Spacing 3rd Order
IDQ1 = 100 mA IDQ2 = 210 mA
VDD = 26 Vdc Center Frequency = 1960 MHz 100 kHz Tone Spacing 1 Pout, OUTPUT POWER (WATTS) AVG. 10 30
Figure 7. Two - Tone Power Gain versus Output Power
Figure 8. Intermodulation Distortion Products versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
IMD, INTERMODULATION DISTORTION (dBc) -30 3rd Order Pout, OUTPUT POWER (dBm) 48 P3dB = 44.8 dBm (30 W) P1dB = 44 dBm (25 W) 44 Actual Ideal
-40
46
-50
5th Order
-60
7th Order VDD = 26 Vdc, Pout = 75 W (PEP) IDQ1 = 100 mA, IDQ2 = 170 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 1 10 100
42 VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 10 15 20 Pin, INPUT POWER (dBm) 25 30
-70
40
-80 0.1
38 TWO-TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products versus Tone Spacing
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 0.1 PAE ACPR
Figure 10. Pulsed CW Output Power versus Input Power
-25 -30 -35 -40 -45 -50 -55 -60 1 10 30 IM3 (dBc), ACPR (dBc) Gps
VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f1 = 1955 MHz, f2 = 1965 MHz 2-Carrier W-CDMA 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power
50 PAE, POWER ADDED EFFICIENCY (%) 25_C 40 30 26 V 28 Gps, POWER GAIN (dB) 26 24 22 20 18 0 5 10 15 20 25 30 Pout, OUTPUT POWER (WATTS) CW IDQ1 = 100 mA IDQ2 = 170 mA f = 1840 MHz 30 V 28 V VDD = 20 V
32
TC = -30_C
30 Gps, POWER GAIN (dB) 25_C 28 VDD = 26 Vdc IDQ1 = 100 mA IDQ2 = 170 mA f = 1960 MHz 85_C
-30_C 85_C 30 Gps PAE 20
26
24
10 0 1 10 30
22 0.1
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Power Added Efficiency versus CW Output Power
Figure 13. Power Gain versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
28 S21 Gps, POWER GAIN (dB) 27 -15 30 25_C -10 32 TC = -30_C
S21 (dB)
26
-20
S11 (dB)
28
26
85_C
25
VDD = 26 Vdc Pout = 35 dBm CW IDQ1 = 100 mA IDQ2 = 170 mA 1900 1950
-25 S11 2000 2050 -30 2100
24
VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA Two-Tone Measurements, Center Frequency = 1960 MHz 1900 1920 1940 1960 1980 2000 2020
24 1850
22 1880
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
Figure 15. Power Gain versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% ms)
10 VDD = 26 Vdc IDQ1 = 100 mA IDQ2 = 170 mA f = 1960 MHz EDGE Modulation TC = -30_C 85_C
25_C
50 PAE, POWER ADDED EFFICIENCY (%)
-50 -55 -60 -65 -70 -75 -80 -85 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 SR @ 600 kHz 25_C -30_C 85_C SR @ 400 kHz VDD = 26 Vdc, IDQ1 = 100 mA IDQ2 = 170 mA, f = 1960 MHz EDGE Modulation TC = -30_C
25_C
8
40
6 EVM 4 PAE
30
85_C
20
2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG.
10 0 30
30
Figure 16. EVM and Power Added Efficiency versus Output Power
Figure 17. Spectral Regrowth at 400 and 600 kHz versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109
108 MTTF (HOURS)
1st Stage
107 2nd Stage 106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 26 Vdc, Pout = 15 W PEP, and PAE = 28%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 18. MTTF versus Junction Temperature
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 19. EDGE Spectrum
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 9
f = 1930 MHz Zload f = 1990 MHz
Zo = 25 f = 1990 MHz
f = 1930 MHz Zsource
VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W CW f MHz 1930 1950 1970 1990 Zsource W 23.37 - j21.93 22.77 - j22.53 22.19 - j22.20 22.64 - j21.84 Zload W 1.62 + j0.26 1.59 + j0.04 1.57 - j0.16 1.54 - j0.36
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance -- 1930 - 1990 MHz
MW6IC2015NBR1 MW6IC2015GNBR1 10 RF Device Data Freescale Semiconductor
VDD2 VDD1 C1 RF INPUT 1 2 3 NC 4 NC 5 NC 6 C6 VGG1 R1 C14 VGG2 R2 C4 C15 C5 7 NC 8 Quiescent Current Temperature Compensation 9 NC 13 10 NC 11 12 C8 Z10 C11 C10 C16 C12 C13 DUT 16 NC 15 C2 Z9 RF OUTPUT C3
Z1
Z2
Z3
14
Z4
Z5
C7
C9
Z6
Z7
Z8
Z1* Z2 Z3 Z4 Z5 Z6*
1.64 0.54 0.15 0.13 0.10 0.26
x 0.08 Microstrip x 0.08 Microstrip x 0.04 Microstrip x 0.35 Microstrip x 0.35 Microstrip x 0.04 Microstrip
Z7* Z8 Z9, Z10 PCB
0.41 x 0.04 Microstrip 1.18 x 0.04 Microstrip 1.18 x 0.08 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning.
Figure 21. MW6IC2015NBR1(GNBR1) Test Circuit Schematic -- 1805 - 1880 MHz
Table 7. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values -- 1805 - 1880 MHz
Part C1, C14, C15 C2, C4, C11 C3, C5 C6 C7, C8 C9, C10, C12 C13 C16 R1 R2 Description 2.2 F Chip Capacitors 5.6 pF Chip Capacitors 10 F Chip Capacitors 1.5 pF Chip Capacitor 2.7 pF Chip Capacitors 0.8 pF Chip Capacitors 0.1 pF Chip Capacitor 1 pF Chip Capacitor 10 k, 1/4 W Chip Resistor 18 , 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B5R6CT500XT C5750X5R1H106MT ATC100A1R5BT500XT ATC100B2R7BT500XT ATC100B0R8BT500XT ATC100B0R1BT500XT ATC100B1R0BT500XT CRCW12061002FKEA CRCW120618R0FKEA Manufacturer TDK ATC TDK ATC ATC ATC ATC ATC Vishay Vishay
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 11
VDD1
C2
C3 VDD2
MW6IC2015, Rev. 0
C1
CUT OUT AREA
C7 C8
C9 C11 C16 C10 C12 C13
C6
C14 R1 VGG1 C15 R2 C4 VGG2 C5
Figure 22. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout -- 1805 - 1880 MHz
MW6IC2015NBR1 MW6IC2015GNBR1 12 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz
IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 32 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 31 30 29 IMD 28 27 26 1800 VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing 1820 1840 1860 1880 Gps -40 -50 -60 1900 IRL 0 -10 -20 -30
PAE
f, FREQUENCY (MHz)
Figure 23. Two - Tone Wideband Performance @ Pout = 7.5 Watts Avg.
30 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) Gps IRL 22 VDD = 26 Vdc, Pout = 1.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing -24 0
26
-12
18
IMD
-36
14 PAE 10 1800 1820 1840 f, FREQUENCY (MHz) 1860
-48
-60 1880
Figure 24. Two - Tone Wideband Performance @ Pout = 1.5 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc) 32 31 Gps, POWER GAIN (dB) 30 29 28 27 26 25 24 0.1 IDQ1 = 130 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 130 mA IDQ1 = 70 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 210 mA -10 -20 -30 5th Order -40 -50 -60 -70 -80 0.1 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 7th Order VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f = 1840 MHz, 100 kHz Tone Spacing 3rd Order
VDD = 26 Vdc Center Frequency = 1840 MHz 100 kHz Tone Spacing 1 Pout, OUTPUT POWER (WATTS) PEP 10 30
Figure 25. Two - Tone Power Gain versus Output Power
Figure 26. Intermodulation Distortion Products versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 13
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz
IMD, INTERMODULATION DISTORTION (dBc) -30 3rd Order -40 5th Order -50 VDD = 26 Vdc, Pout = 7.5 W (Avg.), IDQ1 = 100 mA IDQ2 = 170 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz -60 7th Order -70 0.1 48 P3dB = 44.7 dBm (30 W) P1dB = 44 dBm (25 W) 44 Actual Ideal
Pout, OUTPUT POWER (dBm)
46
42 VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1840 MHz 10 15 20 Pin, INPUT POWER (dBm) 25 30
40
38 1 10 100 TWO-TONE SPACING (MHz)
Figure 27. Intermodulation Distortion Products versus Tone Spacing
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 IM3 5 0 0.1 PAE ACPR 1 VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f1 = 1835 MHz, f2 = 1845 MHz 2-Carrier W-CDMA 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 28. Pulsed CW Output Power versus Input Power
-20 -25 IM3 (dBc), ACPR (dBc) -30 Gps -35 -40 -45 -50 -55 -60 10 30
Pout, OUTPUT POWER (WATTS) AVG.
Figure 29. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power
50 -30_C
32 TC = -30_C 30 Gps, POWER GAIN (dB) 25_C 25_C PAE 26 85_C 24 VDD = 26 Vdc, IDQ1 = 100 mA IDQ2 = 170 mA, f = 1840 MHz 1 Pout, OUTPUT POWER (WATTS) CW 10 30 Gps 85_C
30 PAE, POWER ADDED EFFICIENCY (%) 30 V 28 V 28 Gps, POWER GAIN (dB) 26 24 V 24 VDD = 20 V 22 20 18 0 5 10 15 20 25 Pout, OUTPUT POWER (WATTS) CW IDQ1 = 100 mA IDQ2 = 170 mA f = 1840 MHz 26 V
40
28
30
20
10 0
22 0.1
Figure 30. Power Gain and Power Added Efficiency versus CW Output Power MW6IC2015NBR1 MW6IC2015GNBR1 14
Figure 31. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz
27 S11 26 25 S21 (dB) 24 23 22 21 20 1600 VDD = 26 Vdc, Pout = 35 dBm CW IDQ1 = 100 mA, IDQ2 = 170 mA 1700 1800 1900 2000 2100 -40 2200 S21 -5 -10 -15 S11 (dB) -20 -25 -30 -35 Gps, POWER GAIN (dB) 34 32 30 28 26 24 85_C VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA Two-Tone Measurements, Center Frequency = 1840 MHz 1800 1820 1840 1860 1880 1900 1920 TC = -30_C
25_C
22 1780
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 32. Broadband Frequency Response
10 VDD = 26 Vdc IDQ1 = 100 mA IDQ2 = 170 mA f = 1840 MHz EDGE Modulation PAE 4 EVM 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 10 0 30 20 TC = 85_C 50 PAE, POWER ADDED EFFICIENCY (%) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -50 -55 -60 -65 -70 -75
Figure 33. Power Gain versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% ms)
-30_C
8
40 25_C 30
VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f = 1840 MHz, EDGE Modulation -30_C
TC = 25_C
6
-30_C SR @ 400 kHz 85_C
25_C -80 -85 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 30 SR @ 600 kHz 85_C
Figure 34. EVM and Power Added Efficiency versus Output Power
Figure 35. Spectral Regrowth at 400 and 600 kHz versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 15
Zo = 50
f = 1800 MHz f = 1880 MHz Zload
f = 1880 MHz Zsource f = 1800 MHz
VDD = 26 Vdc, IDQ1 = 130 mA, IDQ2 = 170 mA, Pout = 3 W Avg. f MHz 1800 1820 1840 1860 1880 Zsource W 24.32 - j26.99 23.96 - j25.93 23.86 - j25.63 23.01 - j24.23 23.55 - j23.33 Zload W 1.94 - j1.29 1.88 - j1.42 1.83 - j1.54 1.79 - j1.64 1.74 - j1.75
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 36. Series Equivalent Source and Load Impedance -- 1805 - 1880 MHz
MW6IC2015NBR1 MW6IC2015GNBR1 16 RF Device Data Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
VDD2 VDD1 C1 RF INPUT 1 2 3 4 5 6 C6 7 NC 8 9 C12 C14 R2 C4 C13 C5 10 11 NC NC NC NC NC 14 Z3 DUT NC 16 NC 15 C2 Z9 RF OUTPUT C3
Z1
Z2
Z4
C7
Z5
C9
Z6 C10
Z7
Z8 C11
C8 Quiescent Current Temperature Compensation Z10
R1 VGG
NC 13 NC 12
Z1 Z2 Z3 Z4 Z5
0.772 0.409 0.138 0.148 0.064
x 0.056 Microstrip x 0.056 Microstrip x 0.237 Microstrip x 0.237 Microstrip x 0.237 Microstrip
Z6 Z7 Z8 Z9, Z10 PCB
0.060 x 0.237 Microstrip 0.539 x 0.056 Microstrip 0.190 x 0.056 Microstrip 1.066 x 0.078 Microstrip Taconic TLX8, 0.020, r = 2.55
Figure 37. MW6IC2015NBR1(GNBR1) Test Circuit Schematic -- TD - SCDMA Table 8. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values -- TD - SCDMA
Part C1, C3, C5, C14 C2, C4, C10 C6 C7, C8 C9, C11 C12, C13 R1, R2 Description 2.2 F Chip Capacitors 5.6 pF Chip Capacitors 1 pF Chip Capacitor 2.7 pF Chip Capacitors 0.5 pF Chip Capacitors 100 nF Chip Capacitors 5 k Potentiometer CMS Cermet Multi - turn Part Number C3225X5R1H225MT 08051J5R6CBS 08051J1R0BBS 08051J2R7CBS 08051J0R5BBS C1206CK104K5RC 3224W Manufacturer TDK AVX AVX AVX AVX Kemet Bourns
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 17
VDD1
VDD2
C3 MW6IC2015NB, Rev. 1 C1
C2
C7 C9 C6 C8 C10
C11
C12
C13 C14 C5 C4
R1
R2 VGG
Figure 38. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout -- TD - SCDMA
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TYPICAL CHARACTERISTICS
-20 -25 -30 ALT/ACPR (dBc) -35 -40 -45 Adj-L -50 Alt-L -55 -60 15 17 19 21 23 25 Pout, OUTPUT POWER (dBm) AVG. Alt-U 27 1 0.5 0 Adj-U 3-Carrier TD-SCDMA VDD1 = VDD2 = 28 V IDQ1 = 150 mA, IDQ2 = 160 mA f = 2017.5 MHz 4 3.5 3 PAE 2.5 2 1.5 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 1.28 MHz Channel BW
Figure 39. 3 - Carrier TD - SCDMA ACPR, ALT and Power Added Efficiency versus Output Power
-20 -25 -30 ALT/ACPR (dBc) -35 -40 -45 -50 -55 -60 15 17 19 21 23 Alt-U 25 27 Adj-U Adj-L Alt-L 6-Carrier TD-SCDMA VDD1 = VDD2 = 28 V IDQ1 = 150 mA, IDQ2 = 160 mA f = 2017.5 MHz 4 3.5 3 PAE 2.5 2 1.5 1 0.5 0
Pout, OUTPUT POWER (dBm) AVG.
Figure 40. 6 - Carrier TD - SCDMA ACPR, ALT and Power Added Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
-30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 1.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 15 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW -30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz
-130 Center 2.0175 GHz
-130 Center 2.0175 GHz
Figure 41. 3 - Carrier TD - SCDMA Spectrum
Figure 42. 6 - Carrier TD - SCDMA Spectrum MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data Freescale Semiconductor
19
Zo = 50
Zload f = 2070 MHz
Zsource f = 2070 MHz
f = 1950 MHz
f = 1950 MHz
VDD = 28 Vdc, IDQ1 = 150 mA, IDQ2 = 160 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zsource W 25.25 + j0.19 25.16 + j0.34 25.07 + j0.49 24.98 + j0.64 24.89 + j0.79 24.80 + j0.94 24.71 + j1.09 24.63 + j1.25 24.54 + j1.40 24.45 + j1.56 24.37 + j1.71 24.28 + j1.87 24.20 + j2.03 Zload W 1.78 + j0.33 1.75 + j0.43 1.72 + j0.54 1.68 + j0.67 1.65 + j0.78 1.63 + j0.89 1.62 + j1.00 1.61 + j1.09 1.58 + j1.19 1.55 + j1.31 1.50 + j1.43 1.48 + j1.62 1.46 + j1.65
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 43. Series Equivalent Input and Load Impedance -- TD - SCDMA MW6IC2015NBR1 MW6IC2015GNBR1 20 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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MW6IC2015NBR1 MW6IC2015GNBR1 22 RF Device Data Freescale Semiconductor
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MW6IC2015NBR1 MW6IC2015GNBR1 24 RF Device Data Freescale Semiconductor
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MW6IC2015NBR1 MW6IC2015GNBR1 26 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 2 Date Feb. 2007 Description * Added "and TD - SCDMA" to data sheet description paragraph, p. 1. * Updated verbiage on Typical Performances table, p. 2 * Corrected VBIAS and VSUPPLY callouts, Figs. 3 and 21, Test Circuit Schematic, p. 4, 11, Figs. 4 and 22, Test Circuit Component Layout, p. 5, 12 * Updated Part Numbers in Tables 6 and 7, Component Designations and Values, to RoHS compliant part numbers, p. 4, 11 * Adjusted scale for Figs. 7 and 25, Two - Tone Power Gain versus Output Power, Figs. 8 and 26, Intermodulation Distortion Products versus Output Power, Figs. 11 and 29, 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power, Figs. 12 and 30, Power Gain and Power Added Efficiency versus CW Output Power, Figs. 16 and 34, EVM and Power Added Efficiency versus Output Power, Figs. 17 and 35, Spectral Regrowth at 400 and 600 kHz versus Output Power, to better match the device's capabilities, p. 6 - 8, 13 - 15 * Replaced Figure 18, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 9 * Corrected Series Impedance data table test conditions, Figs. 20 and 36, p. 10, 16 * Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 17 - 20. * Added Product Documentation and Revision History, p. 27 3 Dec. 2008 * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 * Changed 220C to 225C in Capable Plastic Package bullet, p. 1 * Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1, Functional Block Diagram, p. 1 * Changed Storage Temperature Range in Max Ratings table from - 65 to +200 to - 65 to +150 for standardization across products, p. 2 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 2 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 2 * Updated Part Numbers in Tables 6, 7, and 8 Component Designations and Values, to latest RoHS compliant part numbers, p. 4, 11, 17 * Removed lower voltage tests from Figs. 13 and 31, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7, 14 * Adjust scale for Fig. 27, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 14 * Replaced Case Outline 1329A - 03 with 1329A - 04, Issue F, p. 1, 24 - 26. Added pin numbers 1 through 17. Corrected mm dimension L for gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Corrected L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number. * Replaced Case Outline 1329 - 09, Issue L, with 1329 - 09, Issue M, p. 21 - 23. Added pin numbers 1 through 17.
MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 27
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MW6IC2015NBR1 MW6IC2015GNBR1
Rev. 28 3, 12/2008 Document Number: MW6IC2015N
RF Device Data Freescale Semiconductor

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