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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors DESCRIPTION *DC Current Gain -hFE = 1000(Min)@ IC= -3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C *Complement to Type BDT63/A/B/C APPLICATIONS *Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT62 Collector-Base Voltage BDT62A BDT62B VALUE -60 -80 -100 UNIT BDT62/A/B/C VCBO BDT62C VCEO Collector-Emitter Voltage VEBO IC ICM IB B Emitter-Base Voltage w w BDT62 BDT62A BDT62B BDT62C scs .i w -120 -60 -80 -100 -120 -5 -10 -15 -0.25 90 150 -65~150 .cn mi e V V V A A A W Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.39 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT62 BDT62A IC= -30mA; IB= 0 BDT62B BDT62C VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BDT62 BDT62A IC= -3A; IB= -12mA B BDT62/A/B/C CONDITIONS MIN -60 -80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -100 -120 -2.0 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.5 -0.5 mA -0.5 -0.5 -5 1000 200 -2.0 V mA V V V IC= -8A; IB= -80mA B IC= -3A; VCE= -3V ICBO Collector Cutoff Current ICEO Collector Cutoff Current w ww BDT62B BDT62C BDT62 BDT62A BDT62B BDT62C scs .i B B B B VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150 VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150 VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150 VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150 .cn mi e mA VCE= -30V; IB= 0 VCE= -40V; IB= 0 VCE= -50V; IB= 0 VCE= -60V; IB= 0 VEB= -5V; IC= 0 IC= -3A; VCE= -3V IC= -10A; VCE= -3V IE= -3A IEBO hFE-1 hFE-2 VECF Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Switching Times ton toff Turn-On Time IC= -3A; IB1= -IB2= -12mA Turn-Off Time 2.5 s 0.5 s isc Websitewww.iscsemi.cn |
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