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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 DESCRIPTION *With TO-3PN package *High speed switching *High voltage,high reliability *Wide area of safe operation APPLICATIONS *For CRT horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 120 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1402 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA; IC=0 IC=4A; IB=0.8A 6 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V A A ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 10 hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1402 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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