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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1470
DESCRIPTION *With TO-3PL package *Complement to type 2SD2222 *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For power amplification
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -8 -15 120 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA
B
2SB1470
MIN -160
TYP.
MAX
UNIT V
-3.0 -3.0 -100 -100 -100 1000 3500 20 20000
V V A A A
IC=-7A ;IB=-7mA
B
VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V 1.0 1.5 1.2 s s s
hFE-2 classifications Q 3500-10000 S 7000-20000
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1470
Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)
3


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