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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3980
DESCRIPTION *Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min.) *Wide Area of Safe Operation *High Speed Switching
*
APPLICATIONS *Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO IC
Emitter-Base Voltage
w w
scs .i w
900 V 900 V 800 V 7 V 4 A 6 A 2 A
.cn mi e
Collector Current-Continuous
ICM
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @Ta=25
3 W
PC Collector Power Dissipation @TC=25 Tj Junction Temperature 70
150

Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3980
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
800
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.5
V
VBE(sat) ICBO IEBO
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.5
V A A
Collector Cutoff Current
VCB= 900V; IE= 0 VEB= 7V; IC= 0
50
Emitter Cutoff Current
50
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
fT
Current-Gain--Bandwidth Product
Switching Times
ton ts tf
Turn-on Time
Storage Time
ww w
scs .i
IC= 2A; VCE= 5V
IC= 0.2A; VCE= 5V; f= 1MHz
.cn mi e
8 6
15
MHz
0.7
s s s
IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V
2.5
Fall Time
0.3
isc Websitewww.iscsemi.cn


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