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| 2N2221AX MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED SWITCHING BIPOLAR NPN TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FEATURES 5.33 (0.210) 4.32 (0.170) * SILICON NPN TRANSISTOR * METAL CASE (JEDEC TO-18) * HIGH SPEED SWITCHING 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) min. APPLICATIONS: 3 2 1 SUITABLE FOR HIGH SPEED SWITCHING APPLICATIONS TO-18 (TO-206AA) CASE Pin 1 - Emitter PIN CONFIGURATION Pin 2 - Base Pin 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC Ptot Ptot Tstg Tj Collector-Base Voltage (IE = 0V) Collector-Emitter Voltage (IB = 0V) Emitter Base Voltage (IC = 0V) Collector Current Total Dissipation @ Tamb = 25C Total Dissipation @ Tcase = 25C Storage Temperature Max Operating Junction Temperature 60V 40V 5V 0.8A 0.5W 1.8W -65 to 200C 175C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4055 Issue 1 2N2221AX ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ICBO IEBO V(BR)CBO V(BR)CEO* V(BR)EBO VCE(sat)* VBE(sat)* Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Conditions VCB=50V VEB=3V IC=10A IC=10mA IE=10A IC=150mA IC=500mA IC=150mA IC=500mA IC=0.1mA IC=1mA IC=10mA IC=150mA IC=500mA IC=150mA IE=0V Tamb=150C IC=0V IE=0A IB=0V IC=0V IB=15mA IB=50mA IB=15mA IB=50mA VCE=10V VCE=10V VCE=10V VCE=10V VCE=10V VCE=1V VCE=20V VCB=10V Min. Typ. Max. 10 10 10 Unit nA A nA V V V 60 30 5 0.4 1.6 1.3 2.6 20 25 35 40 20 20 250 8 83.3 300 200 V V V V hFE* DC Current Gain fT CCBO RthJC RthJA Transition Frequency (f=100MHz) Collector-Base Capacitance (f=100kHz) Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient IC=20mA IE=0A MHz pF C/W * Pulsed: Pulse duration = 300s, duty cycle = 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4055 Issue 1 |
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