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IRGI4086PBF
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package
l
PD - 96223
Key Parameters
VCE min VCE(ON) typ. @ IC = 25A IRP max @ TC= 25C TJ max
C
c
300 1.29 230 150
V V A C
G E
E C G
n-channel
G G ate C C ollector
TO-220AB Full-Pak
E E m itter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
30 25 12 230 43 17 0.34 -40 to + 150 300 10lbxin (1.1Nxm)
Units
V A
c
W W/C C N
Thermal Resistance
Parameter
RJC Junction-to-Cased
Typ.
---
Max.
2.9
Units
C/W
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02/02/09
IRGI4086PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage VCES/TJ Breakdown Voltage Temp. Coefficient BVCES
Min.
300 --- --- --- --- --- --- --- 2.6 --- --- --- --- --- --- --- --- --- -- -- -- -- -- -- -- -- 100 --- ---
Typ. Max. Units
--- 0.29 1.10 1.29 1.49 1.90 2.57 2.27 --- -11 2.0 5.0 100 --- --- 29 65 22 36 31 112 65 30 33 145 98 --- 1075 1432 2250 110 58 5.0 13
Conditions
VCE(on)
Static Collector-to-Emitter Voltage
VGE(th) VGE(th)/TJ ICES
Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current
IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE
Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse
Ciss Coss Crss LC LE
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance
--- --- --- --- ---
--- V VGE = 0V, ICE = 1 mA --- V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 12A 1.36 VGE = 15V, ICE = 25A 1.55 VGE = 15V, ICE = 40A 1.67 V VGE = 15V, ICE = 70A 2.10 VGE = 15V, ICE = 120A 2.96 VGE = 15V, ICE = 70A, TJ = 150C --- 5.0 V VCE = VGE, ICE = 500A --- mV/C 25 A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 100C --- VCE = 300V, VGE = 0V, TJ = 150C --- 100 nA VGE = 30V VGE = -30V -100 --- S VCE = 25V, ICE = 25A --- nC VCE = 200V, IC = 25A, VGE = 15Ve --- IC = 25A, VCC = 196V -- -- ns RG = 10, L=200H, LS= 200nH TJ = 25C -- -- IC = 25A, VCC = 196V -- -- ns RG = 10, L=200H, LS= 200nH TJ = 150C -- -- --- ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V --- J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V --- VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V --- --- pF VCE = 30V
e e e e e
--- --- nH ---
= 1.0MHz,
See Fig.13
Between lead, 6mm (0.25in.) from package and center of die contact
Notes: Half sine wave with duty cycle = 0.1, ton=2sec. R is measured at TJ of approximately 90C.
Pulse width 400s; duty cycle 2%.
2
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IRGI4086PBF
240 200 160
ICE (A)
240 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 200 160
ICE (A)
120 80 40 0 0 4 8 VCE (V)
VGE = 8.0V VGE = 6.0V
VGE = 18V VGE = 15V VGE = 12V VGE = 10V
120 80 40 0
VGE = 8.0V VGE = 6.0V
12
16
0
4
8 VCE (V)
12
16
Fig 1. Typical Output Characteristics @ 25C
240 200 160
ICE (A)
Fig 2. Typical Output Characteristics @ 75C
240 200 160
ICE (A)
VGE = 18V VGE = 15V VGE = 12V VGE = 10V
120 80 40 0 0 4 8 VCE (V)
VGE = 8.0V VGE = 6.0V
VGE = 18V VGE = 15V VGE = 12V VGE = 10V
120 80 40 0
VGE = 8.0V VGE = 6.0V
12
16
0
4
8 VCE (V)
12
16
Fig 3. Typical Output Characteristics @ 125C
240 200 T J = 25C 160 T J = 150C
Fig 4. Typical Output Characteristics @ 150C
10 IC = 25A 8
120 80 40 0 2 4 6 8 10 12 14 16 VGE (V)
VCE (V)
ICE (A)
6
TJ = 25C TJ = 150C
4
2
0 5 10 V GE (V) 15 20
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRGI4086PBF
30 25
240 220 200
Repetitive Peak Current (A)
ton= 2s Duty cycle <= 0.05 Half Sine Wave
180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 Case Temperature (C)
20
IC (A)
15 10 5 0 0 25 50 75 T C (C) 100 125 150
Fig 7. Maximum Collector Current vs. Case Temperature
1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 160 170 180 190 200 210 220 230 25C VCC = 240V L = 220nH C = variable
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1600 1400 L = 220nH C = 0.4F 100C
Energy per Pulse (J)
Energy per Pulse (J)
100C
1200 1000 800 600 400 200 150 160 170 180 190 200 210 220 230 240 VCE, Collector-to-Emitter Voltage (V) 25C
IC, Peak Collector Current (A)
Fig 9. Typical EPULSE vs. Collector Current
2000 VCC = 240V 1600
Energy per Pulse (J)
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1000
L = 220nH t = 1s half sine
C= 0.4F
100
10sec
1200
100sec
IC (A)
10
1msec
800
C= 0.3F
400
1
C= 0.2F
Tc = 25C Tj = 150C Single Pulse
0 25 50 75 100 125 150 TJ, Temperature (C)
0.1 1 10 VCE (V) 100 1000
Fig 11. EPULSE vs. Temperature
Fig 12. Forward Bias Safe Operating Area
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IRGI4086PBF
10000
25
ID= 25A VDS = 240V VDS = 200V VDS = 150V
VGE, Gate-to-Source Voltage (V)
Cies
20
Capacitance (pF)
1000
15
10
100
Coes Cres
10 0 100 200 300
5
0 0 20 40 60 80 100 QG Total Gate Charge (nC)
VCE (V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
10
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.12489 0.35135 1.07738 1.34638
i (sec)
0.00005 0.001807 0.133584 2.34
1
2
3
4
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGI4086PBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy IC Current
0
L DUT 1K VCC
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRGI4086PBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
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DSAD'#B !#F A"#AAAAAAAAA"!
Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
96U@A8P9@ @6SA A2A! X@@FA!# GDI@AF
TO-220AB Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information.
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009
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