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UNISONIC TECHNOLOGIES CO., LTD UP2790
Preliminary Power MOSFET
SWITCHING N- AND P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UP2790 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use in Motor Drive application..
FEATURES
* Low on-state resistance: N-channel: VGS =10V, ID=3A: RDS(ON) = 28 m (MAX) VGS=4.5V, ID=3A: RDS(ON) = 40 m (MAX) P-channel: VGS= -10V, ID=-3A: RDS(ON) = 60 m (MAX) VGS=-4.5V, ID=-3A: RDS(ON) = 80 m (MAX) * Low input capacitance N-channel : CISS with 500 pF (Typ.) P-channel : CISS with 460 pF (Typ.) * Built-in gate protection diode * Halogen Free
SYMBOL
(7,8) D1 (5,6) D2
(2) G1
(4) G2
S1(1) N MOS
S2(3) P MOS
ORDERING INFORMATION
Ordering Number UP2790G-S08-R Package SOP-8 Packing Tape Reel
www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd
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PIN CONFIGURATION
Preliminary
Power MOSFET
Source 1 Gate 1 Source 2 Gate 2
1 2 3 4
8 7 6 5
Drain 1 Drain 1 Drain 2 Drain 2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UP2790
N-Channel PARAMETER Drain to Source Voltage (VGS=0V) Gate to Source Voltage (VDS=0V) Continuous Drain Current Pulsed Drain Current (Note 2) Single Avalanche Current (Note 3) Single Avalanche Energy (Note 3) Power Dissipation (Note 4) Junction Temperature Storage Temperature P-Channel
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25C, unless otherwise specified)
SYMBOL VDSS VGSS ID IDM IAS EAS PD TJ TSTG RATINGS 30 20 6 24 6 3.6 1.7 +150 -55 ~ +150 UNIT V V A A A mJ W C C
PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (VGS=0V) VDSS -30 V Gate to Source Voltage (VDS=0V) VGSS 20 V Drain Current (DC) ID 6 A Pulsed Drain Current (Note 2) IDM 24 A Single Avalanche Current (Note 3) IAS -6 A Single Avalanche Energy (Note 3) EAS 3.6 mJ Power Dissipation (Note 4) PD 1.7 W Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW10 s, Duty Cycle1% 3. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 1 x VDSS, RG = 25 , Starting TJ = 25C 4. L = 0.1mH, VDD = 2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UP2790
N-Channel
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Ta =25C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note) SYMBOL IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VDS =30 V, VGS =0 V VGS = 16 V, VDS=0 V VDS =10V, ID =1mA VGS =10 V, ID =3 A VGS =4.5 V, ID =3 A VGS =4.0 V, ID =3 A 1.5 21 28 34 500 135 77 9.2 8.8 28 7.4 12.6 1.7 3.8 0.85 18 11 MIN TYP MAX UNIT 10 10 2.5 28 40 53 A A V m m m pF pF pF ns ns ns ns nC nC nC V ns nC
DYNAMIC PARAMETERS Input Capacitance CISS VDS =10 V, VGS =0 V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=15V, VGS=10 V ID=3 A, RG=10 Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VDD =24 V, VGS =10 V, ID =6 A Gate to Source Charge QGS Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS = 6 A, VGS =0V (Note) Reverse Recovery Time tRR IDS = 6 A, VGS=0V, dI/dt=100A/s Reverse Recovery Charge QRR P-Channel
PARAMETER OFF CHARACTERISTICS Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note)
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge
SYMBOL IDSS IGSS VGS(TH) RDS(ON)
TEST CONDITIONS VDS =-30 V, VGS =0 V VGS = 16 V, VDS=0 V VDS =-10V, ID =-1mA VGS =-10 V, ID =-3 A VGS =-4.5 V, ID =-3 A VGS =-4.0 V, ID =-3 A
MIN TYP MAX UNIT -10 10 -1.0 43 58 65 460 130 77 8.5 4.8 42 19 11 1.7 3.3 -2.5 60 80 110 A A V m m m pF pF pF ns ns ns ns nC nC nC
CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD
VDS =-10 V, VGS =0 V, f=1.0MHz
VDD=-15V, VGS=-10 V ID=-3 A , RG=10 ,
VDD =-24 V, VGS =-10 V, ID =-6 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS = 6 A, VGS =0V (Note) Reverse Recovery Time tRR IDS = 6 A, VGS=0V, dI/dt=100A/s Reverse Recovery Charge QRR Note: Pulsed MIN TYP MAX UNIT 0.92 21 12 V ns nC
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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