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Preliminary Technical Information
Depletion Mode MOSFET
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
VDSX ID(on)
RDS(on)
= >
500V 1.6A 2.3
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Ratings 500 20 30 100 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g g
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
300 260 1.13 / 10 0.35 2.50 3.00
G
DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.0 V Advantages * Easy to Mount * Space Savings * High Power Density Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250A VDS = 25V, ID = 100A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 0.8A, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 500 - 2.0
100 nA 2 A 25 A 2.3 1.6 A
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100179A(12/09)
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 VGS = 5V, VDS = 250V, ID = 0.8A Resistive Switching Times VGS = 5V, VDS = 250V, ID = 0.8A RG = 5 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 0.8A, Note 1 Characteristic Values Min. Typ. Max. 1.00 1.75 645 65 16.5 25 70 35 41 23.7 2.2 13.8 0.50 S pF pF pF ns ns ns ns nC nC nC 1.25 C/W C/W
A A1 A2 b b1 b2 c c1 Dim. Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21
1. 2. 3. 4. Gate Drain Source Drain Bottom Side
TO-252 AA (IXTY) Outline
Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 0.15A, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 60 W
D D1 E E1 e e1 H L
2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92
0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 1.6A, VGS = -10V, Note 1 IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 400 9.16 1.83 1.3 V ns A C
L1 L2 L3
TO-220 (IXTP) Outline
Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline
Dim. A b b2 c c2 D D1 E 1. 2. 3. 4. Gate Drain Source Drain E1 e L L1 L2 L3 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
Fig. 1. Output Characteristics @ T J = 25C
1.6 1.4 1.2 VGS = 5V 3V 2V 1V 10 9 8 7 2V 1V VGS = 5V 3V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
ID - Amperes
1.0 0V 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2V -1V
6 5 4 3 2 1 0 0 5 10 15 20
0V
-1V -2V 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
1.6 1.4 1.2 VGS = 5V 2V 1V 0V -1V
1E-02 1E+00
Fig. 4. Drain Current @ T J = 25C
VGS = - 2.25V - 2.50V
1E-01
- 2.75V - 3.00V
ID - Amperes
0.8 0.6 0.4 0.2 -3V 0.0 0 1 2 3 4 5 6 -2V
ID - Amperes
1.0
- 3.25V
1E-03
- 3.50V
1E-04
- 3.75V
1E-05
- 4.00V
1E-06
0
100
200
300
400
500
600
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ T J = 100C
1.E+00 1.E+08
Fig. 6. Dynamic Resistance vs. Gate Voltage
VDS = 350V - 100V
1.E+07
VGS = -2.50V -2.75V -3.00V
1.E-01
ID - Amperes
-3.25V
1.E-02
R O - Ohms
1.E+06
TJ = 25C
1.E+05
-3.50V
TJ = 100C
1.E-03
-3.75V
1.E+04
-4.00V
1.E-04 1.E+03
0
100
200
300
400
500
600
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
-2.2
VDS - Volts
VGS - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6 VGS = 0V 2.2 I D = 0.8A 3.0 3.5 VGS = 0V 5V - - - -
Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current
R DS(on) - Normalized
1.8
R DS(on) - Normalized
2.5 TJ = 125C
1.4
2.0
1.0
1.5 TJ = 25C 1.0
0.6
0.2 -50 -25 0 25 50 75 100 125 150
0.5 0 1 2 3 4 5 6
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
6 VDS= 30V 5 3.0 2.5 3.5 VDS= 30V
Fig. 10. Transconductance
g f s - Siemens
4
ID - Amperes
2.0 1.5 1.0 0.5 0.0
3 TJ = 125C 25C - 40C
TJ = - 40C 25C 125C
2
1
0 -3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
1
2
3
4
5
6
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature
1.3 5 VGS= -10V
Fig. 12. Forward Voltage Drop of Intrinsic Diode
BV / VGS(off) - Normalized
1.2 VGS(off) @ VDS = 25V
4
IS - Amperes
1.1 BVDSX @ VGS = - 5V 1.0
3
2
TJ = 125C TJ = 25C
0.9
1
0.8 -50 -25 0 25 50 75 100 125 150
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
Fig. 13. Capacitance
10,000 5
Fig. 14. Gate Charge
4 3 VDS = 250V I D = 0.8A I G = 10mA
f = 1 MHz
Capacitance - PicoFarads
1,000
Ciss
2
VGS - Volts
100 Coss Crss 10 0 5 10 15 20 25 30 35 40
1 0 -1 -2 -3 -4 -5 0 5 10 15 20 25
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C
10.0 RDS(on) Limit 100s 10.0
Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C
RDS(on) Limit
25s
100s
ID - Amperes
1.0
1ms
ID - Amperes
1.0 1ms
10ms TJ = 150C TC = 25C Single Pulse 0.1 10.0010 100 DC 0.1 100ms TJ = 150C TC = 75C Single Pulse 1,000 10 100 10ms DC 100ms 1,000
Fig. 17. Maximum Transient Thermal Impedance
VDS - Volts VDS - Volts
Fig. 17. Maximum Transient Thermal Resistance
2.00 1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N50D2(2C)8-14-09

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