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PD-97192B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads (Si) 0.22 300K Rads (Si) 0.22
IRHNM57110 JANSR2N7503U8 100V, N-CHANNEL
REF: MIL-PRF-19500/743
5
TECHNOLOGY
ID QPL Part Number 6.9A JANSR2N7503U8 6.9A JANSF2N7503U8 SMD-0.2
(METAL LID)
Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid)
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary P-Channel Available IRHNM597110, IRHNMC597110
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 6.9 4.4 27.6 23 0.18 20 24 6.9 2.3 11.5 -55 to 150 300 (for 5s) 0.25 (Typical)
Pre-Irradiation
Units
A W W/C V mJ A mJ V/ns C g
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IRHNM57110, JANSR2N7503U8
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 -- 3.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.13 -- -- -7.5 -- -- -- -- -- -- -- -- -- -- -- -- 6.8 378 108 2.3 8.0 -- -- 0.22 4.0 -- -- 10 25 100 -100 15 4.0 5.0 6.6 5.4 34 15 -- -- -- -- V V/C V mV/C S A nA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 4.4A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 4.4A A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 6.9A VDS = 50V VDD = 50V, ID = 6.9A, VGS = 12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
nC
ns
nH
pF
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 100KHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 6.9 27.6 1.2 144 633
Test Conditions
A
V ns nC Tj = 25C, IS = 6.9A, VGS = 0V Tj = 25C, IF = 6.9A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 5.4
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Pre-Irradiation Radiation Characteristics
IRHNM57110, JANSR2N7503U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (SMD-0.2) Diode Forward Voltage Up to 300K Rads (Si)1
Min
100 2.0 -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS = 80V, VGS = 0V VGS = 12V, ID = 4.4A VGS = 12V, ID = 4.4A VGS = 0V, ID = 6.9A
-- 4.0 100 -100 10 0.226 0.22 1.2
-- --
1. Part Number IRHNM57110, IRHNM53110 and additional part numbers listed on page 10.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm )) 38 5% 61 5% 84 5%
2
Energy
(MeV) 300 7.5% 330 7.5% 350 10%
Range
(m) 38 7.5% 31 10% 28 7.5%
@VGS = @VGS =
VDS (V)
@VGS = @VGS = @VGS =
0V 100 100 100
-5V 100 100 100
-10V 100 100 80
-15V 100 35 25
-20V 100 25 -
120 100 80 60 40 20 0 0 -5 -10 Bias VGS (V) -15 -20
Bias VDS (V)
LET=38 5% LET=61 5% LET=84 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNM57110, JANSR2N7503U8
Pre-Irradiation
100
TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
5.0V
5.0V
1
1
0.1 0.1 1
20s PULSE WIDTH Tj = 25C 10 100
20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
ID, Drain-to-Source Current (A)
T J = 25C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 6.9A
2.0
T J = 150C 10
1.5
1.0
VDS = 50V 20s PULSE WIDTH 15 1.0 5 7 9 11 13 15 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
RDS(on), Drain-to -Source On Resistance ( )
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 4 6 8 T J = 25C 10 12 T J = 150C
ID = 6.9A
RDS(on), Drain-to -Source On Resistance ( )
1.6
0.8
0.6
T J = 150C
0.4 T J = 25C 0.2
Vgs = 12V 0 0 2 4 6 8 10 12 14 16 ID, Drain Current (A)
14
16
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
140
4
130
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
3
120
2
110
1
ID = 50A ID = 250A
ID = 1.0mA ID = 150mA
100 -60 -40 -20 0 20 40 60 80 100 120 140 160
0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHNM57110, JANSR2N7503U8
Pre-Irradiation
800 700 600
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED
20 ID = 6.9A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
500 400 300 200 100 0 1
Ciss Coss
12
8
4 FOR TEST CIRCUIT SEE FIGURE 17 0 0 2 4 6 8 10 12 14 16
Crss
10 100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
7 6
TJ = 150C
ISD, Reverse Drain Current (A)
ID, Drain Current (A)
1.4 1.6
10
5 4 3 2 1 0
1
T J = 25C
0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
T C , Case Temperature (C)
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
EAS , Single Pulse Avalanche Energy (mJ)
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
50
ID, Drain-to-Source Current (A)
40
TOP BOTTOM
10
ID 3.1A 4.4A 6.9A
30
100s 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 1ms 10ms
DC
20
10
0.1
0
1000
25
50
75
100
125
150
VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response ( Z thJC )
D = 0.50 0.20
1
P DM t1
0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
t2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1
0.1 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRHNM57110, JANSR2N7503U8
Pre-Irradiation
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
VGS 20V
. D.U.T
IAS tp
+ - VDD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 16a. Unclamped Inductive Test Circuit
4.5V
QG
12V
50K .2F .3F
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
Fig 17a. Basic Gate Charge Waveform VDS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
IG
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
VDS 90%
RD
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
Case Outline and Dimensions -- SMD-0.2 ( Metal Lid)
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE
Case Outline and Dimensions -- SMD-0.2 (Ceramic Lid)
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE
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IRHNM57110, JANSR2N7503U8
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L=1.0 mH Peak IL = 6.9A, VGS = 12V ISD 6.9A, di/dt 560A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Additional Product Summary (continued from page 1 and 3) Product Summary
Part Number IRHNMC57110 IRHNMC53110 Radiation Level RDS(on) ID 100K Rads (Si) 0.22 6.9A 300K Rads (Si) 0.22 6.9A QPL Part Number JANSR2N7503U8C JANSF2N7503U8C
SMD-0.2
( CERAMIC LID )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2010
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