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INC2001AX SERIES
FEATURE
Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=40mV(TYP.)@IC=50mA/IB=2.5mA Low on Resistance Ron=0.65(TYP.)@IB=5mA
FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
INC2001AT2 (PRELIMINARY) INC2001AM1
2.1 0.2 0.8 0.2 0.425 1.25
Unitmm
0.425
0.25
0.65
0.4
APPLICATION
1.2 0.8

0.4
0.9
0.65
muting circuit , switching circuit
2.0 1.3
MARKING
0.7
R W
JEITA, JEDEC ISAHAYAT-USM TERMINAL CONNECTOR BASE EMITTER COLLECTOR INC2001AU1
1.6 0.4 0.8 0.4
JEITASC-70 JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR INC2001AC1
2.5 0.5 1.5 0.5
0.3
00.1
0.15 00.1 0.16 0.4
0.5

2.9 1.90
1.6 1.0
0.7
0.55
0.15
1.1
JEITASC-75A JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
00.1
JEITASC-59 JEDECSimilar to TO-236 TERMINAL CONNECTOR BASE EMITTER COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
0.5
0.95
0.5
0.3
.
INC2001AX SERIES
FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature INC2001AT2 RATING INC2001AU1 INC2001AM1 40 40 20 600 150 +150 -55+150 LIMIT TYP 200 INC2001AC1 UNIT V V V mA mW
125 +125 -55+125
ELECTRICAL CHARACTERISTICS
SYMBOL B EB CE E Cob RON PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance Output "ON" resistance
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
TEST CONDITION I C=50AIE=0mA I E=50AIC=0mA I C=1mARBE= VCB=40VI E =0mA VEB=40VI C =0mA VCE=5VI C =10mA I C =50mAI B =2.5mA VCE=10VI E =-10mAf=100MHz VCB=10VI E =0Af=1MHz IB=5mARL=1k
MIN 40 40 20
MAX
UNIT V V V A A mV MHz pF
820 40 50 5.0 0.65
0.5 0.5 2500 150
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT 100 Ta=25
100uA
COMMON EMITTER TRANSFER 50 VCE=5V
COLLECTOR CURRENT : IC (mA)
80uA 70uA 60uA
COLLECTOR CURRENT : IC (mA)
80
90uA
40
60
50uA 40uA 30uA
30
Ta=75
20
40
25 -40
20uA 10uA
20
10
IB=0uA
0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0 0 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE : VBE (V)
ISAHAYA ELECTRONICS CORPORATION
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 VCE=5V
DC REVERSE CURRENT GAIN VS. COLLERCTOR CURRENT 10000 VEC=5V
Ta=75
DC REVERSE CURRENT GAIN : hFER DC FORWARD CURRENT GAIN : hFE 1000 1000
Ta=75
25 -40
100
25 -40
100
10
10
1 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA)
1 0.1 1 10 100 COLLECTOR CURRENT : -IC (mA) 1000
COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) IC/IB=20
100
Ta=25 VCE=10V
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
GAIN BAND WIDTH PRODUCT : fT(MHz)
80
100
60
Ta=75
40
10
25 -40
20
1 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA)
0 -1 -10 EMITTER CURRENT : IE(mA) -100
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 Ta=25 COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
ON RESISTANCE VS. BASE CURRENT
100
ON RESISTANCE : Ron ()
10
10
Ta=75
1
1
25 -40
0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB(V)
0.1 0.01
0.1 1 BASE CURRENT : IB (mA)
10
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Sep.2008

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