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| SGM2306 5.3A, 20V,RDS(ON) 32m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. SOT-89 Features * Capable Of 2.5V Gate Drive * Lower On-Resistance Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. REF. A B C D E F REF. G H I J K L M D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 12 5.3 4.3 10 1.5 0.012 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 83.3 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SGM2306 5.3A, 20V,RDS(ON) 32m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS= 12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=10V, ID=5.5A o 0.1 _ _ _ _ _ _ 0.5 _ _ _ _ _ 1.2 100 1 10 30 35 50 90 Static Drain-Source On-Resistance 2 RDS(ON) _ _ _ _ m[ VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 13 _ _ _ _ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC ID=5.3A VDS=10V VGS=4.5V _ _ _ _ _ _ _ VDS=15V ID=1A nS VGS=10V RG=2 [ RD=15[ _ _ _ _ _ _ pF VGS=0V VDS=15V f=1.0MHz _ _ S VDS=5V, ID=5.3A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.2A, VGS=0V. Is=5A,VGS=0V dl/dt=100A/uS Reverse Recovery Time 2 Trr Qrr 16.8 _ _ nS Reverse Recovery Charge _ 11 nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on FR4 board, t O 10sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SGM2306 5.3A, 20V,RDS(ON) 32m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SGM2306 5.3A, 20V,RDS(ON) 32m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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