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2N7002E Small Signal MOSFET
60 V, 310 mA, Single, N-Channel, SOT-23
Features
* * * * * * * *
Low RDS(on) Small Footprint Surface Mount Package Trench Technology This is a Pb-Free Device
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V(BR)DSS 60 V RDS(on) MAX 3.0 W @ 4.5 V 2.5 W @ 10 V ID MAX (Note 1) 310 mA
Applications
Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Simplified Schematic
N-Channel 3
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (Note 1) Steady State t<5s Power Dissipation (Note 1) Steady State t<5s Pulsed Drain Current (tp = 10 ms) Operating Junction and Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TA = 25C TA = 85C TA = 25C TA = 85C PD Symbol VDSS VGS ID Value 60 20 260 190 310 220 300 420 1.2 -55 to +150 300 260 mW
3
Unit V V mA 2 (Top View) 1
MARKING DIAGRAM & PIN ASSIGNMENT
Drain
3
IDM TJ, TSTG IS TL
A C mA C
1 2
SOT-23 CASE 318 STYLE 21 703 W
703 W
1 2
Gate = Device Code = Work Week
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJA Max 417 300 Unit C/W
ORDERING INFORMATION
Device 2N7002ET1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2007
April, 2007 - Rev. 1
1
Publication Order Number: 2N7002E/D
2N7002E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf VSD TJ = 25C TJ = 85C VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W VGS = 5 V, VDS = 10 V; ID = 240 mA VGS = 10 V, ID = 240 mA VGS = 4.5 V, ID = 50 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 200 mA 0.79 0.7 1.2 V 26.7 VGS = 0 V, f = 1 MHz, VDS = 25 V 4.6 2.9 0.81 0.31 0.48 0.08 1.7 1.2 4.8 3.6 ns nC pF VDS = 5 V, ID = 200 mA VGS = 0 V, VDS = 60 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 60 75 1 500 100 1.0 4.4 0.86 1.1 80 2.5 3.0 S 2.5 nA V mV/C W V mV/C mA Symbol Test Condition Min Typ Max Units
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
2. Pulse Test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures
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2N7002E
TYPICAL CHARACTERISTICS
2.0 1.6 1.2 0.8 3.0 V 0.4 0 2.5 V 2.0 V 0 2 4 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = 10 V 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V ID, DRAIN CURRENT (A) 0.8 1.2
ID, DRAIN CURRENT (A)
3.5 V
0.4
TJ = 25C
0
TJ = 125C 0 2
TJ = -55C 4 6
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.4 VGS = 4.5 V 2.0 1.6 TJ = 25C 1.2 0.8 0.4 0 TJ = -55C TJ = 125C TJ = 85C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.4
Figure 2. Transfer Characteristics
VGS = 10 V 2.0 1.6 1.2 0.8 0.4 0 TJ = 125C TJ = 85C TJ = 25C TJ = -55C
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 3. On-Resistance vs. Drain Current and Temperature
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2
Figure 4. On-Resistance vs. Drain Current and Temperature
ID = 0.2 A 1.8
ID = 250 mA 1.2 ID = 75 mA
VGS = 4.5 V VGS = 10 V
1.4
0.8
1.0
0.4
2
4
6
8
10
0.6 -50
-25
0
25
50
75
100
125
150
VGS, GATE-TO-SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. On-Resistance vs. Gate-to-Source Voltage
Figure 6. On-Resistance Variation with Temperature
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2N7002E
TYPICAL CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (V) 40 Ciss TJ = 25C VGS = 0 V 5 4 3 2 1 0 TJ = 25C ID = 0.25 A
C, CAPACITANCE (pF)
30
20 Coss
10
0
Crss 0 4 8 12 16 20
0
0.2
0.4
0.6
0.8
1
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
10 VGS = 0 V IS, SOURCE CURRENT (A)
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
1 TJ = 85C 0.1 TJ = 25C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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2N7002E
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
A L
3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
BS
V
G
C D H K J
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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2N7002E/D

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