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Photodiode Preliminary EPD-280-0-0.3-2 31.05.2007 rev. 03/07 Case TO-39 Type clear UV-glass Technology SiC Wavelength UV-A - UV-C Description Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-39 package with clear UV-glass window Note: housing with diffuse glass window available on request 0,03 4,1 0,1 Chip Location 9, 90 0,1 0,1 0,45 0, 1 O7,62 O9,14 5,08 5,90 8,13 Applications Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes Anode 80 0, 13,5 1,0 Chip Location 45,0 0 05 0, Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of IPh Operating temperature range Storage temperature range Acceptance angle at 50% S Test onditions Symbol A TC(IPh) Tamb Tstg Value 0.056 0.1 -40 to +70 -40 to +100 70 Unit mm %/K C C deg. Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Spectral bandwidth at 50% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Photo currentat = 254 nm1,2) 1) 2) Test conditions IR = 100 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 280 nm = 280 nm VR = 0 V VR = 0 V Ee = 100 W/cm Symbol VR ID p S min, max 0.5 RSH NEP D* CJ IPh Min Typ 20 10 280 0.13 Max Unit V 100 fA nm A/W 220 80 1 1.1x10 20 3.5 -15 380 nm nm T W/ Hz cm Hz W -1 2.2x1013 pF nA for information only measured with Hg-LP UV-emitter as radiation source Note: All measurements carried out with EPIGAP equipment Labeling Type EPD-280-0-0.3-2 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Lot N RD (typ.) [T ] Quantity Photodiode Preliminary EPD-280-0-0.3-2 31.05.2007 rev. 03/07 Typical responsivity to incident radiation, normalized to S @ = 280 nm 1,0 Short-circuit current vs. irradiance (typical) 2) 10 3 Responsivity (arb. units) 0,8 0,6 Short-circuit current (nA) 10 2 10 1 0,4 10 0 0,2 10 -1 0,0 200 250 300 350 400 10 -2 10 -2 10 -1 Wavelength [nm] 10 2 Irradiance [mW/cm ] 0 10 1 10 2 Short-circuit current vs. ambient temperature 1,04 Short-circuit current (arb. units) 1,00 0,96 0,92 -40 -20 0 20 40 Ambient temperature [ C] 60 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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