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| HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS IXFH/IXFT12N100Q IXFH/IXFT10N100Q ID25 RDS(on) 1000 V 12 A 1.05 1000 V 10 A 1.20 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 12N100Q 10N100Q 12N100Q 10N100Q 12N100Q 10N100Q Maximum Ratings 1000 1000 20 30 12 10 48 40 12 10 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-247 AD 6 g TO-268 4 g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 100 TJ = 25C TJ = 125C 50 1 1.05 1.20 V V nA A mA Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density 97539D(12/02) Test Conditions VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 12N100Q 10N100Q Pulse test, t 300 s, duty cycle d 2 % (c) 2002 IXYS All rights reserved IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 10 2900 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 50 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External), 23 40 15 90 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 40 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 P Q R S Dim. Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 200 0.6 7 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 20 TJ = 25 C O 15 VGS = 10V 9V 8V 7V TJ = 125OC 16 12 VGS = 10V 9V 8V 7V 6V ID - Amperes ID - Amperes 12 6V 9 6 3 5V 8 4 5V 0 0 0 4 8 12 16 20 0 6 12 18 24 30 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.4 2.2 VGS = 10V TJ = 125OC Figure 2. Output Characteristics at 125OC 2.5 VGS = 10V RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 4 8 RDS(ON) - Normalized 2.0 ID = 12A TJ = 25OC 1.5 ID = 6A 12 16 20 1.0 25 50 75 100 125 150 ID - Amperes Figure 3. RDS(on) normalized to value at ID = 12A TJ - Degrees C Figure 4. RDS(on) normalized to value at ID = 12A 16 12 10 12 ID - Amperes 8 ID - Amperes 8 6 TJ = 125oC 4 2 TJ = 25oC 4 0 -50 -25 0 25 50 75 100 125 150 0 3 4 5 6 7 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2002 IXYS All rights reserved IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 12 10 VDS = 500V ID = 6A 5000 2500 Ciss VGS - Volts 8 6 4 2 0 Capacitance - pF f = 1MHz 1000 Coss 500 250 100 Crss 0 20 40 60 80 100 50 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 30 Figure 8. Capacitance Curves 100 25 ID - Amperes ID - Amperes 20 10 0.1ms 1ms 15 TJ = 125 C 10 O 1 TJ = 25 C 5 O TC = 25 C O 10ms 100ms DC 0 0.2 0.1 0.4 0.6 0.8 1.0 1.2 10 100 1000 VSD - Volts VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 1 Figure 10. Forward Bias Safe Operating Area D=0.5 R(th)JC - K/W 0.1 D=0.2 D=0.1 D=0.05 Single pulse 0.01 D=0.02 D=0.01 D = Duty Cycle 0.001 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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