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| ECO-PACTM 2 MOSFET Module PSMG 60/08 S G D Preliminary Data Sheet VDSS = ID25 = RDS(on) = trr 800 V 60 A 0.12 250 ns MOSFET (data related to single chip) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL VISOL Md a Weight Symbol VDSS VGS(th) Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C, RGS = 1 M continuous transient TCase = 25 C TCase = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C IS IDM, di/dt 100A/s, VDD VDSS, TJ 150 C, RG = 2 Maximum Ratings 800 800 20 30 60 240 60 64 3 5 1200 -55...+150 +150 -55...+150 V V V V A A A mJ J V/ns W C C C V~ V~ Nm lb.in. m/s2 g Typical picture; changes of the pin configuration is reserved. Features TCase = 25 C * * * * * * * * * * * * * * * * * * 50/60 Hz, RMS IISOL 1 mA Mounting torque t = 1 min. t=1s (M4) 2500 3000 1.5 14 50 26 Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering Low RDS(on) HDMOSTM process Fast intrinsic Rectifier UL registerd, E 148688 Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls max. allowed acceleration Test Conditions VGS = 0 V, ID = 3 mA VDSS temperature coefficient min. Characteristic Values (TJ = 25 C, unless otherwise specified) 800 0.096 3.0 5.0 -0.214 200 100 2 0.12 V %/K V V %/K nA A mA Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight typ. min. max. VGS = VDS, ID = 8 mA VGS(th) temperature coefficient typ. IGSS IDSS RDS(on) VDS = 0 V, VGS = 20 V VDS = VDSS, VGS = 0 V, VGS TJ = max. 25 C max. TJ = 125 C max. = 10 V, ID = 0.5 . ID25 max. pulse test, t 300 s, duty cycle d 2 % ATTENTION: All given data are derived from similar modules or estimated from chip data. Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 Symbol Ciss Coss Crss td(on) tr td(off) tf RthJC RthCK Test Conditions VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, V = 0.5 . V DS DSS, Characteristic Values (TJ = 25 C, unless otherwise specified) } } typ. typ. typ. typ. typ. typ. typ. 15000 1840 440 45 45 100 40 0.45 0.60 pF pF pF ns ns ns ns K/W K/W ID = 0.5 . ID25 RG = 1 (External) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V repetitive pulse width limited by TJM IF = IS, VGS = 0 V max. TJ= 25 C max. TJ=125 C max. Characteristic Values (TJ = 25 C, unless otherwise specified) max. max. 34 136 1.5 250 400 1.4 10 A A V ns ns C A } pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, TJ= 25 C typ. VR = 100 V typ. Package style and preliminary outline Dimensions in mm (1mm = 0.0394") Characteristic pin configuration; changes of the pin configuration is reserved. ATTENTION: All given data are derived from similar modules or estimated from chip data. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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