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| NGB8207AN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com * Ideal for Coil-on-Plug and Driver-on-Coil Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * Integrated ESD Diode Protection * Low Threshold Voltage for Interfacing Power Loads to Logic or * * * * * Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy - 500 mJ Gate Resistor (RG) = 70 W This is a Pb-Free Device Stress Applied to Load 20 AMPS 365 VOLTS VCE(on) = 1.75 V Typ @ IC = 10 A, VGE . 4.5 V C G RG RGE E D2PAK CASE 418B STYLE 4 Applications * Ignition Systems MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed Continuous Gate Current Transient Gate Current (t 2 ms, f 100 Hz) ESD (Charged-Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C (Note 1) Operating & Storage Temperature Range Symbol VCES VGE IC IG IG ESD ESD ESD PD TJ, Tstg Value 365 $15 20 50 1.0 20 2.0 8.0 500 165 1.1 -55 to +175 Unit V V ADC AAC mA mA kV kV V W W/C C 1 Gate 1 MARKING DIAGRAM 4 Collector NGB 8207ANG AYWW 3 Emitter 2 Collector NGB8207AN = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Assuming infinite heatsink Case-to-Ambient ORDERING INFORMATION Device NGB8207ANT4G Package D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Shipping 800 / Tape & Reel (c) Semiconductor Components Industries, LLC, 2009 July, 2009 - Rev. 0 1 Publication Order Number: NGB8207AN/D NGB8207AN UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-40 TJ 150C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25C VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 0.9 50 275 C/W C/W C Symbol EAS Value 500 306 2000 Unit mJ EAS(R) mJ ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES ICES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current VCE = 24 V VGE = 0 V VCE = 250 V VGE = 0 V Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA Reverse Collector-Emitter Leakage Current ICES(R) VCE = -24 V Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor Gate-Emitter Resistor ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA VGE = VCE Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A VGE = 4.0 V IC = 10 mA VGE = 4.5 V *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 25C TJ = 150C TJ = -40C 1.2 0.7 1.4 - 1.15 1.2 1.2 - 1.5 1.0 1.7 4.0 1.5 1.4 1.6 0.62 2.0 1.3 2.0 - 1.75 1.75 1.75 1.0 mV/C V V BVGES IGES RG RGE IG = $5.0 mA VGE = $10 V TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 14.25 - - - 25 25 24 - 20 - 12 500 325 340 350 365 0.1 1.0 10 0.25 27 29 26 0.5 25 0.03 13 700 70 16 25 375 390 2.0 5 125 2.5 29 31 29 1.1 40 1.0 14.5 1000 V mA W kW mA V mA V Symbol Test Conditions Temperature Min Typ Max Unit http://onsemi.com 2 NGB8207AN ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector-to-Emitter On-Voltage VCE(on) IC = 8.0 A VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C TJ = 25C IC = 10 A VGE = 3.7 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time (Resistive) Low Voltage Rise Time (Resistive) Low Voltage Turn-Off Delay Time (Resistive) Low Voltage Fall Time (Resistive) Low Voltage Turn-On Delay Time (Resistive) High Voltage Rise Time (Resistive) High Voltage Turn-Off Delay Time (Resistive) High Voltage Fall Time (Resistive) High Voltage td(on) tr td(off) tf td(on) tr td(off) tf VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C 0.5 2.0 2.0 8.0 0.5 0.7 4.0 6.0 0.55 2.32 2.5 10 0.65 1.8 4.7 10 0.7 2.7 3.0 13 0.75 2.0 6.0 15 mSec CISS COSS CRSS f = 10 kHz VCE = 25 V TJ = 25C 750 75 4 810 90 7 900 105 12 pF gfs IC = 6.0 A VCE = 5.0 V TJ = 150C TJ = -40C TJ = 25C 1.2 1.4 1.4 1.35 1.5 1.5 1.35 1.5 1.5 1.35 1.4 1.4 - 1.65 1.6 1.7 1.8 1.9 1.85 1.8 1.8 1.8 1.75 1.75 1.8 15.8 2.0 2.0 2.0 2.2 2.2 2.2 2.1 2.1 2.1 2.05 2.1 2.1 - Mhos V Symbol Test Conditions Temperature Min Typ Max Unit *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB8207AN TYPICAL ELECTRICAL CHARACTERISTICS 35 30 25 ISCIS (A) ISCIS (A) 20 15 10 5 0 0 25C 150C 10 20 30 40 50 L (mH) 60 70 80 90 100 35 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 900 100011001200 CLAMPING TIME (mS) 150C 25C Figure 1. Typical Self Clamped Inductive Switching Performance (SCIS) VCE(on), COLLECTOR-TO-EMITTER VOLTAGE (V) 2.75 2.5 2.25 2.0 1.75 1.5 1.25 1.0 0.75 2 TJ = 175C 4 6 8 10 12 14 16 18 20 TJ = 25C TJ = -40C VCE(on), COLLECTOR-TO-EMITTER VOLTAGE (V) 2.75 2.5 2.25 2.0 1.75 1.5 Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) VGE = 4.0 V VGE = 4.0 V IC = 20 A IC = 16 A IC = 10 A IC = 8.0 A IC = 6.0 A 0 20 40 60 80 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (C) 1.25 -40 -20 IC, COLLECTOR CURRENT (A) Figure 3. Collector-to-Emitter Voltage vs. Collector Current 60 IC, COLLECTOR CURRENT (A) 50 40 VGE = 4.0 V 30 20 10 0 VGE = 3.5 V VGE = 3.0 V VGE = 2.5 V 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 6.0 V 5.0 V IC, COLLECTOR CURRENT (A) VGE = 4.5 V 60 50 40 30 Figure 4. Collector-to-Emitter Voltage vs. Junction Temperature VGE = 6.0 V 5.0 V 4.5 V VGE = 4.0 V VGE = 3.5 V 20 10 0 VGE = 3.0 V VGE = 2.5 V 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 5. On-Region Characteristics @ TJ = 255C http://onsemi.com 4 Figure 6. On-Region Characteristics @ TJ = -405C NGB8207AN TYPICAL ELECTRICAL CHARACTERISTICS 60 IC, COLLECTOR CURRENT (A) 50 40 30 20 10 0 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V VGE = 2.5 V 0 1 2 3 4 5 6 7 8 9 10 IC, COLLECTOR CURRENT (A) 60 VCE 5.0 V 50 40 30 20 10 0 1.0 TJ = -40C TJ = 25C TJ = 175C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) Figure 7. On-Region Characteristics @ TJ = 1755C VGE(th), GATE THRESHOLD VOLTAGE (V) 10,000 LEAKAGE CURRENT (mA) 1000 VCE = -24 V 100 10 1 0.1 -40 -20 VCE = 250 V 0 20 40 60 80 100 120 140 160 180 VCE = 320 V 2.0 Figure 8. Transfer Characteristics IC = 1 mA, VCE = VGE 1.75 1.5 1.25 1.0 0.75 0.5 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 9. Collector-to-Emitter Leakage Current vs. Junction Temperature 10,000 TJ = 25C VGE = 0 V C, CAPACITANCE (pF) 1000 Ciss 10 Figure 10. Gate Threshold Voltage vs. Temperature tr td(off) t, TIME (ms) tf 1 100 Coss 10 Crss 1 0 20 40 60 80 100 120 140 160 180 200 td(on) VCC = 14 V VGE = 5.0 V RL = 1.0 W RG = 1 kW -15 10 35 60 85 110 135 160 185 0.1 -40 COLLECTOR-TO-EMITTER VOLTAGE (V) TEMPERATURE (C) Figure 11. Capacitance Variation Figure 12. Resistive Switching Time Variation vs. Temperature http://onsemi.com 5 NGB8207AN TYPICAL ELECTRICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (A) VGE = 4.0 V Single Pulse TC = 25C 10 10 ms 100 ms VCE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ms 10 ms dc 1 0.1 Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 13. Forward Biased Safe Operating Area 1 RqJC(t), TRANSIENT THERMAL RESISTANCE (C/W) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.00001 0.0001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJC(t) 0.01 0.000001 Figure 14. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate) http://onsemi.com 6 NGB8207AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE J C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL M J H TB M W 0.13 (0.005) P U L M SOLDERING FOOTPRINT* 8.38 0.33 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR F VIEW W-W 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NGB8207AN/D |
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