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| HTX16-600 Symbol 2.T2 HTX16-600 600V 16A TRIAC VDRM = 600 V 3.Gate 1.T1 IT(RMS) = 16A 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=16A) High Commutation dv/dt HTP16-600 HTS16-600 General Description The TRIAC HTX16-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maxim um Ratings Symbol VDRM IT(RMS) (Ta=25) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Ta = 98) R.M.S On-State Current (Tc = 68) HTP16-600 Value 600 16 HTS16-600 50Hz 60Hz 155 170 10 2 5 (HTS16-600 only) 1500 -40 to +125 -40 to +125 Units V A A ITSM V GM IGM PGM VISO TSTG Tj Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate Voltage Peak Gate Current Peak Gate Power Dissipation Isolation Breakdown Boltate, AC RMS 1Min Storage Temperature Range Operating Temperature V A W V SEMIHOW REV.1.0 Jan 2006 HTX16-600 Electrical Characteristics Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage (Ta=25) Test Conditions VD=6V RL=10 , VD=6V RL=10 , 1+, 1-, 31+, 1-, 3- M in Typ M ax 30 1.5 Units mA V V Non Trigger Gate Tj =125 VD=1/2VDRM , Voltage Critical Rate of Rise of , DRM Tj =125 VD=2/3V Off-State Voltage at (di/dt)c=-8A/ms Communication Holding Current Repetitive Peak OffState Current VD=VDRM, Single Phase, Half W ave, Tj=125 0.2 10.0 V/uS IH IDRM V TM 25 2.0 1.4 mA mA V Peak On-State V oltage IT=6A, Inst, Measurement Therm Characteristics al Symbol Parameter Test Conditions Case HTP16-600 RTH(J-C) Therm Resistance al Junction to Case HTS16-600 3.0 /W M in Typ M ax 1.4 U nits /W SEMIHOW REV.1.0 Jan 2006 HTX16-600 Performance Curves Fig 1. Gate Characteristics 102 Fig 2.On-State Voltage 101 Gate Voltage (V) On-state Current (A) 101 100 100 10-1 101 102 103 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) On-state Voltage (V) Fig 3. Gate Trigger Voltage vs. Junction Temperature 10 20 18 Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation (W) 16 14 12 10 8 6 4 2 VGT(t) VGT(25) 1 0.1 -50 0 50 100 150 0 0 2 4 6 8 10 12 14 16 18 Junction Temperature () RMS On-State Current (A) Fig 5. On State Current vs. Allowable Case Temperature 130 120 110 100 90 80 70 60 0 2 4 6 8 10 12 14 16 18 20 200 Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current (A) Allowable Case Temp () 150 100 50 0 100 101 102 RMS On-State Current (A) Time (Cycles) SEMIHOW REV.1.0 Jan 2006 HTX16-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impedance Transient Thermal Impedance (/W) IGT(t) IGT(25) 1 1 0.1 -50 0 50 100 150 0.1 10-2 100 10-1 101 100 102 Junction Temperature () Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10 10 A 6V V RG A 6V V RG Test Procedure I Test Procedure II 10 A 6V V RG Test Procedure III SEMIHOW REV.1.0 Jan 2006 HTX16-600 Package Dimension HTP16-600 (TO-220) SEMIHOW REV.1.0 Jan 2006 HTX16-600 Package Dimensions HTS16-600 (TO-220F) Dimensions in Millimeters SEMIHOW REV.1.0 Jan 2006 |
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