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BLA0912-250R
Avionics LDMOS power transistor
Rev. 01 -- 3 March 2010 Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.
Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 C; Zth(j-h) = 0.15 K/W; unless otherwise specified. Mode of operation all modes TCAS Mode-S JTIDS f (MHz) 960 to 1215 1030 to 1090 1030 to 1090 1030 to 1090 960 to 1215 tp (s) 100 32 128 340 % 10 2 1 VDS PL (V) 36 36 36 36 Gp Gp D 50 50 50 50 45 Pdroop(pulse) 0.1 0 0.1 0.2 0.2 tr 25 25 25 25 25 tf 6 6 6 6 6 Zth(j-h) ins(rel) (deg) 5 5 5 5 5 0.18 0.07 0.15 0.20 0.45 (W) (dB) (dB) (%) (dB) 250 13.5 0.8 250 14.0 0.8 250 13.5 0.8 250 13.5 0.8 200 13.0 1.2 (ns) (ns) (K/W)
0.1 36
3300 22
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN.
NXP Semiconductors
BLA0912-250R
Avionics LDMOS power transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1 2 3
sym039
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name Description BLA0912-250R flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Ptot Tstg Tj Parameter drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th 25 C; tp = 50 s; = 2 % Conditions Min -65 Max 75 22 700 +150 200 Unit V V W C C
5. Thermal characteristics
Table 5. Symbol Zth(j-h)
[1]
Thermal characteristics Parameter transient thermal impedance from junction to heatsink Conditions Th = 25 C
[1]
Typ 0.18
Unit K/W
Thermal resistance is determined under RF operating conditions; tp = 100 s, = 10 %.
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA0912-250R
Avionics LDMOS power transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 300 mA VGS = 0 V; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 75 4 45 Typ 9 60 Max Unit 5 1 1 V V A A A S m V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA
drain-source on-state resistance VGS = 9 V; ID = 10 A
Table 7. RF characteristics RF performance in common source class-AB circuit; Th = 25 C; Zth = 0.15 K/W; unless otherwise specified. Symbol VDS f PL Gp D Zth(j-h) Th Pdroop(pulse) resp(spur) tr tf Parameter drain-source voltage frequency output power power gain drain efficiency transient thermal impedance from junction to heatsink heatsink temperature pulse droop power spurious response rise time fall time tp = 100 s; = 10 % VSWRload = 2 : 1 tp = 100 s; = 10 % PL = 250 W tp = 100 s; = 10 % tp = 100 s; = 10 % Conditions Min 960 250 12 40 -55 Typ 13 50 0.1 25 6 0.2 +70 0.5 -60 50 25 Max 36 1215 Unit V MHz W dB % K/W C dB dBc ns ns
6.1 Ruggedness in class-AB operation
The BLA0912-250R is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to 1215 MHz at rated load power.
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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BLA0912-250R
Avionics LDMOS power transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance Typical values per section unless otherwise specified. f MHz 960 1030 1090 1140 1215 ZS 0.89 - j1.70 1.37 - j1.23 2.09 - j1.27 2.40 - j1.97 1.51 - j2.61 ZL 1.53 - j1.13 1.47 - j0.99 1.38 - j0.85 1.30 - j0.71 1.17 - j0.47
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Application circuit
L2
L1
C1
L3 C2
L4 C3 C4
L5
L6 C5
L7
L8
001aab085
See Table 9 for details of striplines.
Fig 2.
Layout of class-AB application circuit
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA0912-250R
Avionics LDMOS power transistor
Table 9. Layout details See Figure 2. Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB); r = 10.2 F/m; thickness = 0.64 mm Component Input circuit L1 C1 L2 stripline stripline stripline 5 mm x 0.8 mm 1.2 mm x 3.5 mm capacitor pad: 1 mm x 1 mm (1x) curve: width 0.8 mm; angle 90; radius 0.8 mm (10x) vertical: 3.9 mm x 0.8 mm (2x) vertical: 9.4 mm x 0.8 mm (3x) horizontal: 0.5 mm x 0.8 mm (4x) L3 C2 L4 C3 Output circuit C4 L5 L6 C5 L7 stripline stripline stripline stripline stripline 0.2 mm x 13 mm + 19 mm x 17.1 mm 2.5 mm x 2.3 mm 4 mm x 1 mm 3 mm x 6.6 mm curve: width 0.8 mm; angle 90; radius 0.8 mm (6x) vertical: 2.2 mm x 0.8 mm (2x) vertical: 6 mm x 0.8 mm (1x) horizontal: 1 mm x 0.8 mm (2x) L8 1/4 line stripline stripline 2.5 mm x 0.8 mm curve: width 1 mm; angle 90; radius 0.8 mm vertical: 5 mm x 1 mm horizontal: 19 mm x 1 mm stripline stripline stripline stripline 3 mm x 2 mm 4 mm x 6.5 mm 5 mm x 1 mm 8.8 mm x 30 mm + 0.2 mm x 13 mm Description Dimensions
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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NXP Semiconductors
BLA0912-250R
Avionics LDMOS power transistor
40
40
C1
C2
C3
C4
C5
R1 R2
C8 C9 C10
60
C6
C7
001aab083
Dimensions in mm. See Table 10 for list of components.
Fig 3.
Component layout for class-AB application circuit
Table 10. List of components See Figure 3. Component C1, C3, C9 C2, C6, C10 C4 C5 C7 C8 R1 R2
[1] [2]
Description
Value
[1] [2]
Remarks
multilayer ceramic chip capacitor 1 nF multilayer ceramic chip capacitor 22 pF tantalum SMD capacitor 47 F multilayer ceramic chip capacitor 56 pF multilayer ceramic chip capacitor 47 pF tantalum SMD capacitor SMD resistor resistor 22 F 51 49.9
KEMET: T491D476M020AS
[2] [2]
KEMET: T491D226M020AS 0805 Philips: 2333 156 14999
American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 100A or capacitor of same quality.
BLA0912-250R_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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NXP Semiconductors
BLA0912-250R
Avionics LDMOS power transistor
8. Test information
8.1 RF performance
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 C; Zth(j-h) = 0.15 K/W; unless otherwise specified.
15 Gp (dB) 13
001aab078
D Gp
55 D (%) 45 Gp (dB)
18 16 14 12 10 (1) (4) (3) (5) (2)
001aab079
11
35
9
25
8 6
7
15 4
5 940
990
1040
1090
1140
1190 f (MHz)
5 1240
2 0 100 200 PL(W) 300
Th = 25 C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 s; = 10 %.
Th = 25 C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
Fig 4.
Power gain and drain efficiency as function of frequency; typical values
Fig 5.
Power gain as a function of load power; typical values
BLA0912-250R_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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NXP Semiconductors
BLA0912-250R
Avionics LDMOS power transistor
300 (2) 250 PL (W) 200
001aab080
60 (5) 50 (1)
001aab081
(1) (5) (4) (3)
D (%) 40 (2) (3) 30 (4)
150
100
20
50
10
0 0 2 4 6 8 10 12 14 16 Pi (W)
0 0 50 100 150 200 250 PL (W) 300
Th = 25 C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
Th = 25 C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz
Fig 6.
Load power as a function of input power; typical values
Fig 7.
Efficiency as a function of load power; typical values
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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BLA0912-250R
Avionics LDMOS power transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 8.
Package outline SOT502A
All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
BLA0912-250R_1
Product data sheet
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NXP Semiconductors
BLA0912-250R
Avionics LDMOS power transistor
10. Abbreviations
Table 11. Acronym DC DME JTIDS LDMOS LDMOST Mode-S RF SMD TACAN TCAS VSWR Abbreviations Description Direct Current Distance Measuring Equipment Joint Tactical Information Distribution System Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Mode Select Radio Frequency Surface Mounted Device TACtical Air Navigation Traffic Collision Avoidance System Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history Release date 20100303 Data sheet status Product data sheet Change notice Supersedes Document ID BLA0912-250R_1
BLA0912-250R_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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BLA0912-250R
Avionics LDMOS power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
(c) NXP B.V. 2010. All rights reserved.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BLA0912-250R_1
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Product data sheet
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BLA0912-250R
Avionics LDMOS power transistor
liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA0912-250R_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 3 March 2010
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BLA0912-250R
Avionics LDMOS power transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2010 Document identifier: BLA0912-250R_1

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