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APTM20DHM16T3G
Asymmetrical - Bridge MOSFET Power Module
13 14 Q1 CR3
VDSS = 200V RDSon = 16m typ @ Tj = 25C ID = 104A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
18
22 19
7
23
8 Q4
CR2
4
3
29 15
30
31
32 16
R1
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 104 77 416 30 19 390 104 50 3000 Unit V A V m W A mJ
August, 2009 1-7 APTM20DHM16T3G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM20DHM16T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Min Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
16 3
Max 250 1000 19 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 J J ns nC Max Unit pF
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/s
Min 200
Typ
Max 250 500
Unit V A A
August, 2009 2-7 APTM20DHM16T3G - Rev 0
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1 1.4 0.9 60 110 200 840
V ns nC
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APTM20DHM16T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight MOSFET diode 4000 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM20DHM16T3G - Rev 0
August, 2009
17
28
APTM20DHM16T3G
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
700 600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
1
2
3
4
5
6
7
8
9 10
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to VGS=10V @ 52A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
RDS(on) Drain to Source ON Resistance
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
TC, Case Temperature (C)
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4-7
APTM20DHM16T3G - Rev 0
August, 2009
25
50
75
100
125
150
APTM20DHM16T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 52A
1000
limited by RDSon
100
100s
10
1ms
Single pulse TJ=150C TC=25C 1
10ms 100ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160
August, 2009 5-7 APTM20DHM16T3G - Rev 0
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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APTM20DHM16T3G
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 ID, Drain Current (A)
VDS=133V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=5 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
td(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 Eoff 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 ID, Drain Current (A)
VDS=133V D=50% RG=5 TJ=125C TC=75C ZCS ZVS VDS=133V RG=5 TJ=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A TJ=125C L=100H
Eoff Eon
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage 1000 TJ=150C
100
TJ=25C 10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
August, 2009 6-7 APTM20DHM16T3G - Rev 0
VSD, Source to Drain Voltage (V)
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APTM20DHM16T3G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 200 trr, Reverse Recovery Time (ns) IF, Forward Current (A)
120
Trr vs. Current Rate of Charge
100 A TJ=125C VR=133V 130 A
150
100
100
TJ=125C TJ=25C
80
50 A
50
60
0 0.0 0.5 1.0 1.5 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=133V 100 A 130 A 50 A
40 0 200 400 600 800 -diF/dt (A/s) 1000 1200
QRR, Reverse Recovery Charge (C)
IRRM, Reverse Recovery Current (A)
2.00 1.75 1.50 1.25 1.00 0.75 0.50 0
50 40 30 20 10 0 0
IRRM vs. Current Rate of Charge
TJ=125C VR=133V 100 A 130 A 50 A
200
400
600
800
1000 1200
200
400
600
800
1000 1200
-diF/dt (A/s)
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 3200 2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 10 100 1000 VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp. 150 125 IF(AV) (A) 100 75
Duty Cycle = 0.5 TJ=150C
25 0 25 50 75 100 125 150 Case Temperature (C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTM20DHM16T3G - Rev 0
August, 2009
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