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| SMG3J14 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 85m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG3J14 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG3J14 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G C H K Drain Gate Source D G J H J K L S Features * High-Speed Switching * Simple Drive Requirment * Low On-Resistance All Dimension in mm D Marking : 3J14 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 20 -3.7 -3.0 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 90 Unit o Rthj-a C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG3J14 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 85m[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 oC) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=- 1.35A o -0. 02 _ _ _ _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 85 145 170 8 _ _ Static Drain-Source On-Resistance 2 RDS(ON) _ _ m[ VGS=-4.5V, ID=-1.35A VGS=-4.0V, ID=-1.35A ID=-3A VDS=-24V VGS=-4.5V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 5 1 3 8 5 20 7 412 91 62 5 nC _ _ _ _ VDS=-15V ID=- 1 A nS VGS=-10V RG=3.3[ RD=15 [ 660 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V , ID=-3A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.2A, VGS=0V. Is=-3A, VGS=0 dl/dt=100A/uS _ _ 20 15 _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG3J14 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 85m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics =-1.35A Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG3J14 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 85m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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