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| SMG3401 -4.2A, -30V,RDS(ON) 50m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A Description The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SMG3401 is universally used for all commercial-industrial applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G C J K Drain D G H J K L S Features * Small Package Outline * Lower Gate Charge * RoHS Compliant H Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 12 -4.2 -3.5 30 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 90 Unit o Rthj-a C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG3401 -4.2A, -30V,RDS(ON) 50m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 oC) o Symbol BVDSS VGS(th) IGSS IDSS Min. -30 -0.7 _ _ _ _ Typ. _ _ _ _ _ _ _ _ Max. _ Unit V V nA uA uA Test Condition VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VGS= 12V VDS=-24V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=- 4.2A -1.3 100 -1 -5 50 65 120 _ _ _ Static Drain-Source On-Resistance 2 RDS(ON) _ _ m[ VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-1.0A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Rg _ _ _ _ _ _ _ _ _ _ 9.4 2 3 6.3 3.2 38.2 12 954 115 77 6 nC ID=-4A VDS=-15V VGS=-4.5V _ _ _ _ _ _ _ VDS=-15V nS VGS=-10V RG= 6 [ RL =3.6 [ pF VGS=0V VDS=-15V f=1.0MHz _ _ [ f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. _ Typ. _ Max. -1.0 Unit V Test Condition IS=-1.0A, VGS=0V. Is=-4 A, VGS=0 dl/dt=100A/uS _ _ _ 20.2 11.2 _ _ _ -2.2 nS nC A Reverse Recovery Charge Continuous Source Current (Body Diode) IS VD=VG=0V,VS=-1.0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG34031 -4.2A, -30V,RDS(ON) 50m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage 10 1 0.1 0.1 0.01 0. 0.001 0.0 0.0001 0.0 0.00001 0.00 01 0.000001 01 Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG3401 -4.2A, -30V,RDS(ON) 50m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Normalized Maximum Transient Thermal Impedance http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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