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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.2 UNIT V V V A A Open collector Collector current-peak Ta=25ae 1.4 W 15 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2923 SYMBOL TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=30mA IB=3m A 1.5 V VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10|I A;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100|I A; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10|I A; IC=0 7 V hFE DC current gain IC=5mA ; VCE=50V 50 250 COB Output capacitance IE=0; VCB=30V;f=1MHz fT IN Transition frequency ANG CH MIC E SE IE=20mA ; VCB=30V OND TOR UC 2.4 70 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2923 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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