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PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 -- 26 January 2010 Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
Unidirectional ESD protection of up to two lines Max. peak pulse power: PPP = 150 W at tp = 8/20 s Low clamping voltage: VCL = 20 V at IPP = 15 A Low reverse leakage current: IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A at tp = 8/20 s
1.3 Applications
Computers and peripherals Audio and video equipment Communication systems High-speed data lines Parallel ports
1.4 Quick reference data
Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Cd diode capacitance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ f = 1 MHz; VR = 0 V 200 150 38 32 23 275 215 100 70 50 pF pF pF pF pF 3.3 5 12 15 24 V V V V V Conditions Min Typ Max Unit
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 common anode
3 3
Simplified outline
Graphic symbol
1
2
1
2
006aaa154
3. Ordering information
Table 3. Ordering information Package Name PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Description plastic surface-mounted package; 3 leads Version SOT663 Type number
4. Marking
Table 4. Marking codes Marking code E1 E2 E3 E4 E5 Type number PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
2 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPP IPP peak pulse power peak pulse current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Per device Tj Tamb Tstg
[1] [2]
Parameter
Conditions tp = 8/20 s tp = 8/20 s
[1][2] [1][2]
Min -65 -65
Max 150 15 15 5 5 3 150 +150 +150
Unit W A A A A A C C C
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured across either pins 1 and 3 or pins 2 and 3.
Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ PESDxS2UQ series
[1] [2]
Parameter
Conditions IEC 61000-4-2 (contact discharge)
[1][2]
Min
Max
Unit
MIL-STD-883 (human body model) -
30 30 30 30 23 10
kV kV kV kV kV kV
Device stressed with ten non-repetitive ESD pulses. Measured across either pins 1 and 3 or pins 2 and 3.
Table 7. Standard Per diode
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
3 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 8. Characteristics Tj = 25 C unless otherwise specified. Symbol Per diode VRWM reverse standoff voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ IRM reverse leakage current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VBR breakdown voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA 5.2 6.4 14.7 17.6 26.5 5.6 6.8 15.0 18.0 27.0 6.0 7.2 15.3 18.4 27.5 V V V V V 0.55 50 <1 <1 <1 3 300 30 50 50 A nA nA nA nA 3.3 5 12 15 24 V V V V V Parameter Conditions Min Typ Max Unit
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
4 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Table 8. Characteristics ...continued Tj = 25 C unless otherwise specified. Symbol Cd Parameter diode capacitance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VCL clamping voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ rdif differential resistance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ
[1] [2]
[1][2]
Conditions f = 1 MHz; VR = 0 V
Min -
Typ 200 150 38 32 23 -
Max 275 215 100 70 50 8 20 9 20 19 35 23 40 36 70 40 15 15 225 300
Unit pF pF pF pF pF V V V V V V V V V V
IPP = 1 A IPP = 15 A IPP = 1 A IPP = 15 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A IR = 5 mA IR = 5 mA IR = 5 mA IR = 1 mA IR = 0.5 mA
-
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured across either pins 1 and 3 or pins 2 and 3.
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
5 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
104 PPP (W) 103
001aaa726
1.2 PPP PPP(25C) 0.8
001aaa193
102
0.4
10 1 10
102 tp (s)
103
0 0 50 100 150 Tj (C) 200
Tamb = 25 C
Fig 3.
Peak pulse power dissipation as a function of pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
50
001aaa728
240 Cd (pF) 200
001aaa727
Cd (pF) 40
160
(1)
30
120
(2)
20
(1) (2)
80
10
(3)
40 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
f = 1 MHz; Tamb = 25 C (1) PESD3V3S2UQ; VRWM = 3.3 V (2) PESD5V0S2UQ; VRWM = 5 V
f = 1 MHz; Tamb = 25 C (1) PESD12VS2UQ; VRWM = 12 V (2) PESD15VS2UQ; VRWM = 15 V (3) PESD24VS2UQ; VRWM = 24 V
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
6 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
10
001aaa729
IRM IRM(25C)
(1) (2)
1
10-1 -100
-50
0
50
100 Tj (C)
150
(1) PESD3V3S2UQ; VRWM = 3.3 V (2) PESD5V0S2UQ; VRWM = 5 V IR is less than 15 nA at 150 C for: PESD12VS2UQ; VRWM = 12 V PESD15VS2UQ; VRWM = 15 V PESD24VS2UQ; VRWM = 24 V
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
7 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
ESD TESTER RZ
450
RG 223/U 50 coax
10x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE
CZ note 1
50
Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 DUT: PESDxS2UQ
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UQ GND PESD15VS2UQ
GND
GND
PESD12VS2UQ
GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
PESD5V2S2UQ
PESD3V3S2UQ clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
001aaa731
Fig 8.
ESD clamping test setup and waveforms
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
8 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
7. Application information
The PESDxS2UQ series is designed for the protection of up to two unidirectional data lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are below ground. The PESDxS2UQ series provides a surge capability of up to 150 W (PPP) per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
line 1 to be protected
PESDxS2UQ ground
PESDxS2UQ ground
unidirectional protection of two lines
bidirectional protection of one line
001aaa730
Fig 9.
Typical application: ESD protection of data lines
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
9 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
8. Package outline
1.7 1.5 3 0.3 0.1 1.7 1.5 1.3 1.1
0.6 0.5
1 0.5 1 Dimensions in mm
2 0.33 0.23 0.18 0.08 02-05-21
Fig 10. Package outline PESDxS2UQ series (SOT663)
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ
[1] For further information and the availability of packing methods, see Section 12.
Package Description SOT663 2 mm pitch, 8 mm tape and reel
Packing quantity 4000 8000 -315
SOT663
4 mm pitch, 8 mm tape and reel
-115
-
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
10 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
10. Revision history
Table 10. Revision history Release date 20100126 Data sheet status Product data sheet Change notice Supersedes PESDXS2UQ_SER_N_3 Document ID PESDXS2UQ_SER_4 Modifications:
* * * * * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1.1 "General description": amended Section 1.4 "Quick reference data": amended Table 2 "Pinning": updated Section 7 "Application information": amended Figure 10: superseded by minimized package outline drawing Section 9 "Packing information": added Section 11 "Legal information": updated Product data sheet Product specification Product specification PESDXS2UQ_SERIES_2 PESDXS2UQ_SERIES_1 -
PESDXS2UQ_SER_N_3
20080911
PESDXS2UQ_SERIES_2 20040427 PESDXS2UQ_SERIES_1 20031215
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
11 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXS2UQ_SER_4
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 26 January 2010
12 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 January 2010 Document identifier: PESDXS2UQ_SER_4

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