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| White Light Emitting Diode(InGaN) KLB-16WC DIMENSIONS KLB-16W is a high bright InGaN white LED whitout using phorsphor. Features * Ultra Wide Viewing Angle * Very Thin Small SMD Package * Single Chip White LED without Phospor Applications * Display * Indicator * Key Pad Back Light Anode Index Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 25 60 65 -30 ~ +85 -40 ~ +105 260 Unit V mA mA mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Symbol Conditions VF Iv x y x y IF = 5 mA IF = 20 mA IF = 5 mA IF = 20 mA IF = 5 mA IF = 20 mA IF = 20 mA KLB-16W 2.9 3.3 70 230 0.33 0.35 0.28 0.33 160 KLB-16W 2.9 3.3 75 240 0.35 0.38 0.29 0.34 160 Typical Values KLB-16W KLB-16W 2.9 2.9 3.3 70 230 0.36 0.36 0.29 0.32 160 3.3 70 230 0.41 0.39 0.31 0.35 160 KLB-16W 2.9 3.3 90 280 0.42 0.42 0.32 0.37 160 [ Ta=25C ] Unit V V mcd Color Coordinate Half angle deg. 1/2 White Light Emitting Diode(InGaN) KLB-16WC Forward current vs. Ambient temperature (IF) 30 25 Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) Relative intensity 20 15 10 5 0 () 100 1 0.5 0 0 20 40 60 80 0 5 Ambient temperature Ta 10 15 20 25 Forward current IF 30 (IF) 35 Relative radiant intensity vs. Ambient temperature 1.2 Relative radiant intensity PO 1 Intensity [arb.] 10 Relative intensity vs. Wavelength 20mA 0.8 0.6 5mA 0.4 0.2 0 350 1 0.1 -20 0 20 40 60 80 100 () 450 550 650 750 850 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage () 30 Radiant Pattern Angle(deg) Forward current IF + 60 25 20 15 10 + 40 + 20 0 -20 -4 0 -6 0 50 -80 -100 +1 0 0 5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF +80 0 100 50 50 0 0 100 Relative intensity(%) 2/2 |
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