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| XP135A1145SR Power MOSFET ETR1116_001 GENERAL DESCRIPTION The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. APPLICATIONS Notebook PCs Cellular and portable phones On-board power supplies FEATURES Low On-State Resistance (Nch) : Rds (on) = 0.033@ Vgs = 10V : Rds (on) = 0.045@ Vgs = 4.5V Low On-State Resistance (Pch) : Rds (on) = 0.065@ Vgs = -10V : Rds (on) = 0.110@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage DMOS Structure Two FET Devices Built-in Package : SOP-8 : 4.5V (Nch) : -4.5V (Pch) N-Channel/P-channel Power MOSFET PIN CONFIGURATION PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 2 3 4 5~6 7~8 S1 G1 S2 G2 D2 D1 Source (Nch) Gate (Nch) Source (Pch) Gate (Pch) Drain (Pch) Drain (Nch) EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS Nch 30 20 6 20 6 2 150 -55~150 Pch -30 20 -4 -16 -4 Ta = 25 UNITS V V A A A W Channel Power Dissipation * Channel Temperature Storage Temperature Range * When implemented on a glass epoxy PCB 1/8 XP135A1145SR ELECTRICAL CHARACTERISTICS DC Characteristics (N-channel Power MOSFET) PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance *1 Forward Transfer Admittance *1 Body Drain Diode Forward Voltage *1 Effective during pulse test. SYMBOL Idss Igss Vgs(off) Rds(on) | Yfs | Vf CONDITIONS Vds= 30V, Vgs= 0V Vgs=20V, Vds= 0V Id= 1mA, Vds= 10V Id= 3A, Vgs= 10V Id= 3A, Vgs= 4.5V Id= 3A, Vds= 10V If= 6A, Vgs= 0V MIN. 1.0 TYP. 0.026 0.035 12 0.85 MAX. 10 1 2.5 0.033 0.045 1.1 Ta = 25 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds= 10V, Vgs=0V f= 1MHz CONDITIONS MIN. TYP. 620 350 120 MAX. - Ta = 25 UNITS pF pF pF Switching Characteristics PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs= 5V, Id= 3A Vdd= 10V CONDITIONS MIN. TYP. 15 20 30 10 MAX. - Ta = 25 UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (Channel-Ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN. TYP. 62.5 MAX. UNITS /W 2/8 XP135A1145SR ELECTRICAL CHARACTERISTICS (Continued) DC Characteristics (P-channel Power MOSFET) PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-state Resistance *1 Forward Transfer Admittance *1 Body Drain Diode Forward Voltage *1 Effective during pulse test. SYMBOL Idss Igss Vgs(off) Rds(on) | Yfs | Vf CONDITIONS Vds= -30V, Vgs= 0V Vgs=20V, Vds= 0V Id= -1mA, Vds= -10V Id= -2A, Vgs= -10V Id= -2A, Vgs= -4.5V Id= -2A, Vds= -10V If= -4A, Vgs= 0V MIN. -1.0 TYP. 0.055 0.09 5 -0.85 MAX. -10 1 -2.5 0.065 0.11 -1.1 Ta = 25 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds= -10V, Vgs= 0V f= 1MHz CONDITIONS MIN. TYP. 680 450 170 Ta = 25 MAX. UNITS pF pF pF Switching Characteristics PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs= -5V, Id= -2A Vdd= -10V CONDITIONS MIN. TYP. 15 20 30 20 Ta = 25 MAX. UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (Channel-Ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN. TYP. 62.5 MAX. UNITS /W 3/8 XP135A1145SR TYPICAL PERFORMANCE CHARACTERISTICS N-channel Power MOSFET 4/8 XP135A1145SR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) N-channel Power MOSFET(Continued) 4A 5/8 XP135A1145SR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) P-channel Power MOSFET 6/8 XP135A1145SR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) P-channel Power MOSFET(Continued) Vds 10V ,Id 4A ,Ta 25 (11) Standardized transition Thermal Resistance vs. Pulse Width 7/8 XP135A1145SR 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this catalog is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this catalog. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. The products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this catalog within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. 8/8 |
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