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 SEMiX453GD176HDc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE 20 V VCES 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1700 444 315 300 600 -20 ... 20 10 -55 ... 150 545 365 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V
Conditions
Values
Unit
SEMiX(R) 33c
Trench IGBT Modules
SEMiX453GD176HDc
Tj = 150 C
IFnom
Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
* AC inverter drives * UPS * Electronic welders
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 5.2 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 26.4 1.10 0.88 2799 2.50 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C 335 70 215 990 150 125 0.071 2 2.45 1 0.9 3.3 5.2 5.8 0.1 2.45 2.9 1.2 1.1 4.2 6.0 6.4 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 1200 V IC = 300 A RG on = 4.3 RG off = 4.3
GD (c) by SEMIKRON Rev. 10 - 16.12.2009 1
SEMiX453GD176HDc
Characteristics Symbol Conditions
Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 4700 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode 0.9 0.7 1.3 1.8
min.
typ.
1.5 1.4 1.1 0.9 1.3 1.8 350 115 65
max.
1.70 1.6 1.3 1.1 1.3 1.8
Unit
V V V V m m A C mJ
Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0
SEMiX(R) 33c
Trench IGBT Modules
SEMiX453GD176HDc
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.11 20
K/W nH m m K/W
res., terminal-chip per module to heat sink (M5)
TC = 25 C TC = 125 C 3 to terminals (M6) 2.5
0.7 1 0.014 5 5 900
Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532
Rth(c-s) Ms Mt w
Nm Nm Nm g K
Typical Applications*
* AC inverter drives * UPS * Electronic welders
Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2%
GD 2 Rev. 10 - 16.12.2009 (c) by SEMIKRON
SEMiX453GD176HDc
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
(c) by SEMIKRON
Rev. 10 - 16.12.2009
3
SEMiX453GD176HDc
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 10 - 16.12.2009
(c) by SEMIKRON
SEMiX453GD176HDc
SEMiX 33c
pinout
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
(c) by SEMIKRON
Rev. 10 - 16.12.2009
5


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