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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS *Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 100 100 7.0 4 6 0.6 1.3 .cn mi e V V V A A A ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 40 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1311 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 A hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain--Bandwidth Product ww w sem isc . IC= 0.1A; VCE= 5V .cn i 40 200 20 MHz isc Websitewww.iscsemi.cn 2 |
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