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| 60 10V 50 2.5V 40 60 50 40 Vgs=2V Vds=5V Id (A) 30 20 10 0 0 1 2 Id(A) 30 20 125C 10 0 25C 3 4 5 0 0.5 1 1.5 2 2.5 Vds (Volts) Fig 1: On-Region Characteristics 6.0 1.6 Vgs(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 5.5 Vgs=4.5V Id=18A 1.4 Vgs=4.5V Rds(on) (m:) Vgs=10V 1.2 5.0 Vgs=10V 4.5 1 4.0 0 10 20 30 40 50 60 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 12 Id=18A 1.0E+00 125C 125C Rds(ON) (m:) 8 Is (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 4 25C UNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=15V Id=18A 100000 Ciss Capacitance (pF) Vgs (Volts) 10000 3 2 1 1000 Crss Coss 0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10ms 10.0 0.1s 1s 10s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100Ps 1ms 10Ps 100 80 Tj(max)=150C Ta=25C Power (W) Id (Amps) 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse 0.001 0.01 0.00001 0.0001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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