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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU999 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 140V(Min) *High Switching Speed *High Power Dissipation APPLICATIONS *Designed for switching and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICP Collector Current-Continuous Collector Current-Pulse w ww scs .i 160 V 140 V 6 V 25 A 40 A 10 A 106 W 200 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.08 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) ICEX ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 50mA; IB= 0 IC= 10A; IB= 1A IC= 25A; IB= 2.5A IC= 10A; IB= 1A IC= 25A; IB= 2.5A IC= 10A; VCE= 2V MIN 140 TYP. BU999 MAX UNIT V 0.8 1.5 1.8 2.5 V V V V V A A A A w w w. sem isc VCE= 140V; VBE= -1.5V VCB= 160V; IE= 0 VCE= 70V; IB= 0 B .cn i 35 25 12 1.8 10 100 50 100 VEB= 6V; IC= 0 IC= 0.5A; VCE= 2V IC= 10A; VCE= 2V IC= 25A; VCE= 2V 100 Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 10A, IB1= -IB2= 1A, VCC= 80V 0.3 1.5 0.25 s s s isc Websitewww.iscsemi.cn 2 |
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