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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 10A *Low Saturation Voltage APPLICATIONS *Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 150 100 8 10 1 40 UNIT V .cn mi e V V IC Collector Current-Continuous A IB B Base Current-Continuous A PC Collector Power Dissipation @ TC=25 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE VECF COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 10mA; IB= 0 IC= 10A; IB= 25mA IC= 10A; IB= 25mA VCB= 150V; IE= 0 VEB= 8V; IC= 0 IC= 10A; VCE= 2V MIN 100 2SD1500 TYP. MAX UNIT V 1.5 2.0 10 16 V V A mA Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w w. sem isc IF= 10A IC= 1A; VCE= 5V IB1= -IB2= 25mA; RL= 5; VCC= 50V IE= 0; VCB= 50V, ftest= 1MHz .cn i 1000 3.0 75 20 V pF MHz 0.6 3.0 1.0 s s s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1500
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