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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION *With TO-220 package *High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS *For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 3 6 1.5 30 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=;,L=100mH IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=400V; IE=0 VCE=350V; RBE=; IC=1.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 400 7 2SC2612 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 100 V V A A Switching times ton tstg tf Turn-on time Storage time Fall time IC=3.0A IB1=- IB2=0.6A VCC@150V 1.2 1.0 2.5 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2612 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 4 |
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