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 RSR025N03
Transistors
4V Drive Nch MOS FET
RSR025N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
TSMT3
1.0MAX 2.9 0.4
(3)
0.85 0.7
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .
(1) Gate
1.6 2.8
0~0.1
(1)
(2)
0.95 0.95 1.9 0.16
Each lead has same dimensions Abbreviated symbol : QY
Application Power switching, DC / DC converter.
(2) Source (3) Drain
Packaging specifications
Package Type RSR025N03 Code Basic ordering unit (pieces) Taping TL 3000
Equivalent circuit
(3) (3)
(1) 1
2
0.3~0.6
(1)
(2)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
1 Pw100s, Duty cycle2% 2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 30 20 2.5 10 0.8 3.2 1 150 -55 to 150
Unit V V A A A A W C C
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter Channel to ambient
2 Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 125
Unit C / W
Rev.C
1/3
RSR025N03
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 1.0 - - - 1.5 - - - - - - - - - - Typ. - - - - 50 74 83 - 165 55 35 6 10 20 5 2.9 0.8 0.9 Max. 10 - 1 2.5 70 105 118 - - - - - - - - 4.1 - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=10V ID=2.5A, VGS=4.5V ID=2.5A, VGS=4V ID=2.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.25A, VDD 15V VGS=10V RL=12.0 RG=10 VDD 15V VGS=5V ID=2.5A
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol Min. VSD -
Typ. -
Max. 1.2
Unit V
Conditions IS=3.2A, VGS=0V
Rev.C
2/3
RSR025N03
Transistors
Electrical characteristic curves
1000
tf
100
GATE-SOURCE VOLTAGE : VGS (V)
10
Ta=25C f=1MHz VGS=0V
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25C VDD=15V VGS=10V RG=10 Pulsed
10
Ta=25C 9 VDD=15V ID=2.5A 8 RG=10 7 Pulsed 6 5 4 3 2 1 0 0 1 2 3 4 5 6
Ciss
100
td (off)
10
tr td (on)
Coss Crss
10 0.01
0.1
1
10
100
1 0.01
0.1
1
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
500
ID=2.5A ID=1.25A
10
Ta=25C Pulsed
VGS=0V Pulsed
DRAIN CURRENT : ID (A)
400
1
SOURCE CURRENT : Is (A)
1
300
0.1
Ta=125C Ta=75C Ta=25C Ta= -25C
200
0.1
0.01
100
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
1000
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=4V Pulsed
100
100
100
10
10
10
1 0.1
1
10
1 0.1
1
10
1 0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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