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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A *High Switching Speed APPLICATIONS *High speed switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 100 V 60 V 7 V 4 A 8 A 1 A 20 W .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 50mA; IB= 0 IC= 2A; IB= 0.2A B 2SC3475 MIN 60 TYP. MAX UNIT V 0.6 1.5 100 100 60 200 V V A A IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 7V; IC= 0 IC= 1A; VCE= 4V IC= 4A; VCE= 4V Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 0.5A; VCE= 4V IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 20 20 70 MHz pF 0.5 2.5 0.5 s s s IB1= -IB2= 0.2A; RL= 15; VCC= 30V hFE-1 classifications O 60-120 Y 100-200 isc Websitewww.iscsemi.cn 2 |
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