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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N6229 2N6230 2N6231 VCBO Collector-base voltage VCEO Collector-emitter voltage INC ANG H SEM Open emitter CON I CONDITIONS TOR DUC VALUE -100 -120 -140 -100 -120 -140 UNIT V 2N6229 2N6230 2N6231 Open base V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector -7 -10 V A W ae ae TC=25ae 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6229 2N6230 2N6231 SYMBOL CONDITIONS MIN TYP. MAX UNIT 2N6229 Collector-emitter sustaining voltage -100 VCEO(SUS) 2N6230 IC=-0.2A ;IB=0 -120 V 2N6231 -140 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current IEBO Emitter cut-off current VCB=Rated VCBO; IE=0 -1.0 mA VEB=-7V; IC=0 2N6229 hFE DC current gain fT Transition frequency INC NG S HA 2N6230 2N6231 IC=-5A ; VCE=-2V OND MIC E TOR UC -0.1 25 100 20 80 15 60 mA IC=-0.5A ; VCE=-4V 1 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6229 2N6230 2N6231 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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