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  Datasheet File OCR Text:
 25 -10V 20 -4.5V -3V
10 Vds=-5V 8
-Id (A)
-Id (A)
15 -2.5V 10
6 125C 4 25C
5
Vgs=-2V
2
0 0 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 1 5
0 0 0.5 1.5 2 2.5 -Vgs (Volts) Figure 2: Transfer Characteristics Id=-5A Vgs=-4.5V Vgs=-10V 1 3
120
1.6
100
80
Vgs=-2.5V
Normalized On-Resistance
1.4
Rds(on) (m:)
1.2
60
Vgs=-4.5V
Vgs=-2.5V Id=-2A
40
1
Vgs=-10V
20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 Id=-2A
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125C
Rds(on) (m:)
130
-Is (A)
110 90 70 50 30 10 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C . 125C
1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=-15V Id=-5A 4
1400 1200
Capacitance (pF)
1000 Ciss 800 600 400 200 Coss Crss
-Vgs (Volts)
3
2
1
0 0 6 8 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12
0 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
100.0
Tj(max)=150C Ta=25C 10Ps Rds(on) limited
40 Tj(max)=150C Ta=25C 30
-Id (Amps)
1ms 0.1s 1.0 1s 10s DC 0.1 0.1 10 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 10ms
Power (W)
10.0
100Ps
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000


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