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| SMG702K 640mA, 60V,RDS(ON) 2[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A Description The SMG702K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG702K is universally used for all commercial-industrial applications S 2 L SC-59 3 Top View B 1 Dim A B C D Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 D G C J K G H J K L S Features * Simple Drive Requirement * RoHS Compliant Product * Small Package Outline H D G Drain Gate Source All Dimension in mm S Marking : 702E Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current , VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 60 f20 640 500 950 1.38 0.01 -55 ~ +150 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 90 Unit /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG702K Elektronische Bauelemente 640mA, 60V,RDS(ON) 2[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 60 1.0 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 3.0 D 10 1 100 2 4 1.6 50 pF ns nC Unit V V/ : V mS uA uA uA L Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=600mA 20V VGS= D VDS=60V, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=500mA VGS=4.5V, ID=200mA ID=600mA VDS=50V VGS=4.5V VDS=30V ID=600mA VGS=10V RG=3.3 L RD=52 L VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Symbol VSD Source-Drain Diode Parameter Forward On Voltage2 Min. Typ. Max. 1.2 Unit V Test Conditions IS=200mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2of 4 SMG702K Elektronische Bauelemente 640mA, 60V,RDS(ON) 2[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3of 4 SMG702K Elektronische Bauelemente 640mA, 60V,RDS(ON) 2[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4of 4 |
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