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MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
PM50CS1D120
FEATURE
Inverter + Drive & Protection IC * 3 phase 50A/1200V CSTBTTM (The Current senser and the thermal senser with a build-in CSTBTTM.) * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
120 7 2-2.54 2-2.54 106 0.3 2-2.54 10.6 6.5 5-2.54
23.79 8.5
10.16
10.16
10.16
16.5
1
4
7
10
15
67.4 5.57 9
V U N P
2-5.5 MOUNTING HOLES 16.5 50 5-M4 NUT (10) Terminal code 11.6 1. VWPC 2. WP 3. VWP1 4. VVPC 5. VP 6. VVP1 7. VUPC 8. UP 9. VUP1 10. VNC 11. 12. 13. 14. 15. VN1 WN VN UN Fo 31.5 + 1 - 0.5 28 30
50
39
2.5
25
W
15
19
19
19
19
LABEL
May 2009 1
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo = 1.5k Fo Rfo VNC WN VN1 VN UN
WP VWPC
VP VWP1 VVPC VVP1 VUPC
UP VUP1
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Vcc
Gnd In
Vcc
Gnd In
Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 1200 50 100 500 -20 ~ +150 Unit V A A W C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Applied between : FO-VNC Sink current at FO terminals Ratings 20 20 20 20 Unit V V V mA
May 2009 2
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 800 1000 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT part (per 1 element) Inverter FWDi part (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.25 0.41 0.046 Unit
C/W
(Note-1) Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 21.4 21.4 -4.6 4.7 VP IGBT FWDi 65.0 65.0 -4.6 4.7 WP IGBT FWDi 90.0 90.0 -4.6 4.7 UN IGBT FWDi 36.0 36.0 -9.9 -0.6 VN IGBT FWDi 51.0 51.0 -9.9 -0.6
(unit : mm) WN IGBT FWDi 76.0 76.0 -9.9 -0.6
Bottom view
Y
X
P
N
U
V
W
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) -IC = 50A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 600V, IC = 50A Tj = 125C Inductive Load VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.65 1.85 2.50 0.65 0.20 0.35 1.10 0.35 -- -- Max. 2.15 2.35 3.50 2.0 0.8 1.0 2.8 1.2 1 10 Unit V V
Switching Time
s
(Fig. 3,4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
May 2009 3
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width output output output output VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 75 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 6 2 1.5 2.0 -- 1.0 -- 20 12.0 12.5 -- 10 1.8 Max. 12 4 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC (Fig. 3,6) -20 Tj 125C, VD = 15V VD = 15V Detect Temperature of IGBT chip -20 Tj 125C VD = 15V, VCIN = 15V VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault Fault Fault Fault
is given only when the internal SC, OT & UV protection. of SC, OT & UV protection operate by lower arms. of SC protection given pulse. of OT, UV protection given pulse while over trip level.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- Parameter Mounting torque Weight Mounting part Main terminal part -- Condition screw : M5 screw : M4 Min. 2.5 1.5 -- Limits Typ. 3.0 1.7 400 Max. 3.5 2.0 -- Unit N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 800 15.0 1.5 0.8 9.0 20 2.5 Unit V V V kHz s
(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND
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MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN Fo IN Fo
P, (U,V,W,B)
VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V,(N)
VD (all)
U,V,W,B, (N)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
trr
U,V
VCE Irr Ic 90%
CS
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic
10% tc(on) VCIN
10%
10% tc(off)
10%
U,V
CS
Vcc
td(on)
tr
td(off)
tf
VCIN (15V)
Fo
(ton = td(on) + tr)
N
(toff = td(off) + tf)
VD (all)
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN Short Circuit Current
P, (U,V,W,B) A
IN Fo
Constant Current SC Trip
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V,W,B, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009 5
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
P
20k 10
VUP1
Vcc
OT OUT Si
VD
IF
UP VUPC
0.1
In GND GND Vcc OT OUT Si In GND GND Vcc OT OUT Si In GND GND Vcc Fo OT OUT Si
+ -
U
VVP1
VD
VP VVPC VWP1
V
M
VD
20k
WP VWPC
W
IF
10
UN
0.1
In GND GND N OT
20k
IF
10
Vcc VN Fo In
OUT Si
0.1 20k
GND GND VN1
10
Vcc Fo In
OT OUT Si
VD
IF
WN
0.1
VNC
GND GND
5V
1k
Fo
Rfo
: Interface which is the same as U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * * *
May 2009 6
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2.5 VD = 15V
70
COLLECTOR CURRENT IC (A)
Tj = 25C VD = 17V
15V
60 50 40 30 20 10 0 0 0.5
2.0
13V
1.5
1.0
0.5 Tj = 25C Tj = 125C 0 0 10 20 30 40 50 60 70
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR RECOVERY CURRENT -IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
DIODE FORWARD CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 12 13 14 15 IC = 50A Tj = 25C Tj = 125C 16 17 18
VD = 15V
101
7 5 4 3 2
Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 3.0
100
CONTROL POWER SUPPLY VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
2
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME ton, toff (s)
SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load toff 100
7 5 4 3 2
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load
2
100
7 5 4 3 2
tc(off)
ton
tc(on)
2 3 4 5 7 101 2 3 4 5 7 102
10-1 0 10
2
3 4 5 7 101
2
3 4 5 7 102
10-1 0 10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
May 2009 7
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
SWITCHING LOSS Eon, Eoff (mJ/pulse)
0.6 0.5 0.4 0.3 0.2 0.1 trr 0 10 20 30 40 50 60 Irr
30 25 20 15 10 5 0 70
4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 Eoff
0
COLLECTOR CURRENT IC (A)
COLLECTOR RECOVERY CURRENT -IC (A)
SWITCHING LOSS Err (mJ/pulse)
SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 3.5 VCC = 600V VD = 15V 3.0 Tj = 25C Tj = 125C 2.5 Inductive load
ID (mA)
ID VS. fc CHARACTERISTICS (TYPICAL) 40.0 35.0 30.0 25.0 VD = 15V Tj = 25C Tj = 125C N-side
2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 70
20.0 15.0 P-side 10.0 5.0 0 0 5 10 15 20 25
COLLECTOR RECOVERY CURRENT -IC (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 14
UVt /UVr
SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 1.6 1.4 1.2
SC
12 10 8 6 4 2 0 -50 0 50 Tj (C) 100 150
1.0 0.8 0.6 0.4 0.2 0 -50 0 50 Tj (C)
May 2009
100
150
8
RECOVERY CURRENT lrr (A)
RECOVERY TIME trr (s)
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 8.0 VCC = 600V 7.0 VD = 15V Tj = 25C Eon Tj = 125C 6.0 Inductive load 5.0
DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 50 VCC = 600V 0.9 VD = 15V 45 Tj = 25C 0.8 40 Tj = 125C 0.7 Inductive load 35
MITSUBISHI
PM50CS1D120
FLAT-BASE TYPE INSULATED PACKAGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
7 5 3 2
10-1
7 5 3 2
10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.25C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 0.41C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec)
May 2009 9

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